Magnetism investigation of GaN monolayer doped with group VIII B transition metals
Source abstract
Abstract
In order to enrich the potential of gallium nitride (GaN) monolayer in low-dimensional spintronic devices, we implement a theoretical study of the magnetic properties of group VIII B transition-metal (TM)-substituted GaN monolayer (ML). The results show that the group VIII B TM atom-substituted systems exhibit a distinct nonzero magnetic moment. The total magnetic moment of the Fe- and Ru-substituted systems is 5 μB, while that of Co- and Rh-substituted systems is 4 μB. Asymmetry of the degenerate and nondegenerate states, based on whether, and how, they are occupied, or not occupied by electrons in spin-up and spin-down bands decides the magnetic moment. The origin of magnetic moment is polarization of TM 3d or 4d electrons and N 2p electrons. Furthermore, co-doping of different TM atoms can increase the magnetic moment of GaN ML.
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Research context
OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · 2D Materials and Applications
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References (13)
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