Chemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates
Source abstract
Abstract
We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Organometallic Compounds Synthesis and Characterization
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References (57)
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