The effect of sintering temperature on magnetic and dielectric properties of Ho3Fe5O12 ceramics
Source abstract
Abstract
Ho3Fe5O12 ceramics were fabricated by the solid-state reaction method. The results revealed an increase of the grain size, dielectric constant, and dielectric loss, while a decrease of the remnant magnetization and coercive field with increasing sintering temperature. A dielectric relaxation behavior was observed, which might be associated with the charge carrier hopping between Fe2+ and Fe3+. A cole–cole fitting to loss peaks revealed a dependence of the activation energy and the broaden factor on the relative density of the samples. Furthermore, at appropriate frequencies, the 1250 °C-sintered samples showed high dielectric constant, low dispassion, and good temperature stability around room temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Dielectric properties of ceramics · Multiferroics and related materials · Magnetic Properties and Synthesis of Ferrites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. Larsen PK, Metselaar R (1976) Phys Rev B 14:252010.1103/PhysRevB.14.2520 ↗
2. Kidoh H, Morimoto A, Shimizu T (2007) Appl Phys Lett 59:23710.1063/1.105977 ↗
3. Legg GJ, Lanchester PC (1980) J Phys C 13:654710.1088/0022-3719/13/35/014 ↗
4. Takano S, Kita E, Tasaki A, Furukawa K, Kohn K, Siratori K, Kimura S (1989) Ferroelectrics 96:25110.1080/00150198908216781 ↗
5. Larsen PK, Metselaar R (1973) Phys Rev B 8:201610.1103/PhysRevB.8.2016 ↗
6. Fechine PBA, Pereira FMM, Santos MRP, Fihiho FP, de Menezes AS, de Oliveira RS, Gòes JC, Cardoso LP, Sombra ASB (2009) J Phys Chem Solids 70:80410.1016/j.jpcs.2009.03.009 ↗
7. Yamasaki Y, Kohara Y, TokuraPhys Y (2009) Phys Rev B 80:14041210.1103/PhysRevB.80.140412 ↗
8. Jawahar K, Choudhary RNP (2007) Solid State Commun 142:44910.1016/j.ssc.2007.03.028 ↗
9. Wu XB, Wang XF, Liu YF, Cai W, Peng S, Huang FZ, Lu XM, Zhu JS (2009) Appl Phys Lett 95:18290310.1063/1.3259651 ↗
10. Wu YJ, Gao Y, Chen XM (2007) Appl Phys Lett 91:09291210.1063/1.2780116 ↗
11. Guillot M, Marchand A (1982) J Appl Phys 53:271910.1063/1.330943 ↗
12. Ostoréro J, Guillot M (1997) J Appl Phys 81:479710.1063/1.365467 ↗
13. Goodshaw HJ, Forrester JS, Suang GJ, Kisi EH (2007) J Mate Sci 42:337. doi: 10.1007/s10853-006-1031-610.1007/s10853-006-1031-6 ↗
14. Thongbai P, Yamwong T, Maensiri S (2008) J Appl Phys 104:07410910.1063/1.2990768 ↗
15. Ahmed MA, Ateia E, El-Dek SI, Salem FM (2003) J Mater Sci 38:1087. doi: 10.1023/A:102231430111310.1023/A:1022314301113 ↗
16. Popa PD, Rezlescu E, Doroftei C, Rezlescu N (2005) J Optoelectron Adv Mater 7:1553
17. Hussain S, Maqsood A (2007) J Magn Magn Mater 316:7310.1016/j.jmmm.2007.03.206 ↗
18. Lee JW, Cho YS, Amarakoon VRW (1999) J Appl Phys 85:569610.1063/1.370255 ↗
19. Tǒpfer J, Schwarzer S, Senz S, Hesse D (2005) J Eur Ceram Soc 25:168110.1016/j.jeurceramsoc.2004.06.003 ↗
20. Costantini JM, Salvetat JP, Brisard F (1997) J Appl Phys 82:506310.1063/1.366403 ↗
21. Cole KS, Cole RH (1941) J Chem Phys 9:34110.1063/1.1750906 ↗
22. Li W, Chen K, Yao YY, Zhu JS, Wang YN (2004) Appl Phys Lett 85:471710.1063/1.1823583 ↗
23. Wang XF, Lu XM, Zhang C, Wu XB, Cai W, Peng S, Bo HF, Kan Y, Huang FZ, Zhu JS (2010) J Appl Phys 107:11410110.1063/1.3430987 ↗
24. Ngai KL, Wang YN, Magalass LB (1994) J Alloys Compd 212:32710.1016/0925-8388(94)90513-4 ↗
25. Homes CC, vogt T, Shapiro SM, Wakimoto S, Ramirez AP (2001) Science 293:67310.1126/science.1061655 ↗
26. Wang CM, Lin SY, Kao KS, Chen YC, Wang SC (2010) J Alloys Compd 491:42310.1016/j.jallcom.2009.10.216 ↗
27. Kim BG, Cho SM, Kim TY, Jang HM (2001) Phys Rev Lett 86:340410.1103/PhysRevLett.86.3404 ↗
28. Fujii I, Ugorek M, Trolier-McKinstry S (2010) J Appl Phys 107:10411610.1063/1.3428423 ↗
29. Cross LE (1987) Ferroelectrics 76:24110.1080/00150198708016945 ↗
30. Sarkar S, Jana PK, Chaudhui BK, Sakata H (2006) Appl Phys Lett 89:21290510.1063/1.2393001 ↗
31. Thongbai P, Yamwong T, Maensiri S (2008) Solid State Commun 147:38510.1016/j.ssc.2008.06.020 ↗
32. Deng GC, Muralt P (2010) Phys Rev B 81:22411110.1103/PhysRevB.81.224111 ↗
33. Shri-Prakash B, Varma KBR (2007) J Mater Sci 42:7467. doi: 10.1007/s10853-006-1251-910.1007/s10853-006-1251-9 ↗
34. Wu J, Nan CW, Lin Y, Deng Y (2002) Phys Rev Lett 89:21760110.1103/PhysRevLett.89.217601 ↗
35. Hsiao YJ, Chang YS, Fang TH, Chai YL, Chung CY, Chang YH (2007) J Phys D 40:86310.1088/0022-3727/40/3/026 ↗