journal article·2011-05

The effect of sintering temperature on magnetic and dielectric properties of Ho3Fe5O12 ceramics

Jie Su, Xiaomei Lu, Chao Zhang, Junting Zhang, Song Peng, Xiaobo Wu, Kangli Min, Fengzhen Huang, Jinsong Zhu

Journal of Materials Science· Volume 46· Issue 10
Publisher page

Abstract

Ho3Fe5O12 ceramics were fabricated by the solid-state reaction method. The results revealed an increase of the grain size, dielectric constant, and dielectric loss, while a decrease of the remnant magnetization and coercive field with increasing sintering temperature. A dielectric relaxation behavior was observed, which might be associated with the charge carrier hopping between Fe2+ and Fe3+. A cole–cole fitting to loss peaks revealed a dependence of the activation energy and the broaden factor on the relative density of the samples. Furthermore, at appropriate frequencies, the 1250 °C-sintered samples showed high dielectric constant, low dispassion, and good temperature stability around room temperature.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Dielectric properties of ceramics · Multiferroics and related materials · Magnetic Properties and Synthesis of Ferrites

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (35)

Show source-provided references
1. Larsen PK, Metselaar R (1976) Phys Rev B 14:252010.1103/PhysRevB.14.2520 ↗
2. Kidoh H, Morimoto A, Shimizu T (2007) Appl Phys Lett 59:23710.1063/1.105977 ↗
3. Legg GJ, Lanchester PC (1980) J Phys C 13:654710.1088/0022-3719/13/35/014 ↗
4. Takano S, Kita E, Tasaki A, Furukawa K, Kohn K, Siratori K, Kimura S (1989) Ferroelectrics 96:25110.1080/00150198908216781 ↗
5. Larsen PK, Metselaar R (1973) Phys Rev B 8:201610.1103/PhysRevB.8.2016 ↗
6. Fechine PBA, Pereira FMM, Santos MRP, Fihiho FP, de Menezes AS, de Oliveira RS, Gòes JC, Cardoso LP, Sombra ASB (2009) J Phys Chem Solids 70:80410.1016/j.jpcs.2009.03.009 ↗
7. Yamasaki Y, Kohara Y, TokuraPhys Y (2009) Phys Rev B 80:14041210.1103/PhysRevB.80.140412 ↗
8. Jawahar K, Choudhary RNP (2007) Solid State Commun 142:44910.1016/j.ssc.2007.03.028 ↗
9. Wu XB, Wang XF, Liu YF, Cai W, Peng S, Huang FZ, Lu XM, Zhu JS (2009) Appl Phys Lett 95:18290310.1063/1.3259651 ↗
10. Wu YJ, Gao Y, Chen XM (2007) Appl Phys Lett 91:09291210.1063/1.2780116 ↗
11. Guillot M, Marchand A (1982) J Appl Phys 53:271910.1063/1.330943 ↗
12. Ostoréro J, Guillot M (1997) J Appl Phys 81:479710.1063/1.365467 ↗
13. Goodshaw HJ, Forrester JS, Suang GJ, Kisi EH (2007) J Mate Sci 42:337. doi: 10.1007/s10853-006-1031-610.1007/s10853-006-1031-6 ↗
14. Thongbai P, Yamwong T, Maensiri S (2008) J Appl Phys 104:07410910.1063/1.2990768 ↗
15. Ahmed MA, Ateia E, El-Dek SI, Salem FM (2003) J Mater Sci 38:1087. doi: 10.1023/A:102231430111310.1023/A:1022314301113 ↗
16. Popa PD, Rezlescu E, Doroftei C, Rezlescu N (2005) J Optoelectron Adv Mater 7:1553
17. Hussain S, Maqsood A (2007) J Magn Magn Mater 316:7310.1016/j.jmmm.2007.03.206 ↗
18. Lee JW, Cho YS, Amarakoon VRW (1999) J Appl Phys 85:569610.1063/1.370255 ↗
19. Tǒpfer J, Schwarzer S, Senz S, Hesse D (2005) J Eur Ceram Soc 25:168110.1016/j.jeurceramsoc.2004.06.003 ↗
20. Costantini JM, Salvetat JP, Brisard F (1997) J Appl Phys 82:506310.1063/1.366403 ↗
21. Cole KS, Cole RH (1941) J Chem Phys 9:34110.1063/1.1750906 ↗
22. Li W, Chen K, Yao YY, Zhu JS, Wang YN (2004) Appl Phys Lett 85:471710.1063/1.1823583 ↗
23. Wang XF, Lu XM, Zhang C, Wu XB, Cai W, Peng S, Bo HF, Kan Y, Huang FZ, Zhu JS (2010) J Appl Phys 107:11410110.1063/1.3430987 ↗
24. Ngai KL, Wang YN, Magalass LB (1994) J Alloys Compd 212:32710.1016/0925-8388(94)90513-4 ↗
25. Homes CC, vogt T, Shapiro SM, Wakimoto S, Ramirez AP (2001) Science 293:67310.1126/science.1061655 ↗
26. Wang CM, Lin SY, Kao KS, Chen YC, Wang SC (2010) J Alloys Compd 491:42310.1016/j.jallcom.2009.10.216 ↗
27. Kim BG, Cho SM, Kim TY, Jang HM (2001) Phys Rev Lett 86:340410.1103/PhysRevLett.86.3404 ↗
28. Fujii I, Ugorek M, Trolier-McKinstry S (2010) J Appl Phys 107:10411610.1063/1.3428423 ↗
29. Cross LE (1987) Ferroelectrics 76:24110.1080/00150198708016945 ↗
30. Sarkar S, Jana PK, Chaudhui BK, Sakata H (2006) Appl Phys Lett 89:21290510.1063/1.2393001 ↗
31. Thongbai P, Yamwong T, Maensiri S (2008) Solid State Commun 147:38510.1016/j.ssc.2008.06.020 ↗
32. Deng GC, Muralt P (2010) Phys Rev B 81:22411110.1103/PhysRevB.81.224111 ↗
33. Shri-Prakash B, Varma KBR (2007) J Mater Sci 42:7467. doi: 10.1007/s10853-006-1251-910.1007/s10853-006-1251-9 ↗
34. Wu J, Nan CW, Lin Y, Deng Y (2002) Phys Rev Lett 89:21760110.1103/PhysRevLett.89.217601 ↗
35. Hsiao YJ, Chang YS, Fang TH, Chai YL, Chung CY, Chang YH (2007) J Phys D 40:86310.1088/0022-3727/40/3/026 ↗