journal article·2013-03

Thermal stability and thermoelectric properties of Mg2Si0.4Sn0.6 and Mg2Si0.6Sn0.4

Martin Søndergaard, Mogens Christensen, Kasper A. Borup, Hao Yin, Bo B. Iversen

Journal of Materials Science· Volume 48· Issue 5
Publisher page

Abstract

Compounds of Mg2Si1−x Sn x are environmentally friendly, inexpensive and high-efficiency thermoelectric materials for energy conversion in the temperature range 300–550 °C. In this study, the thermal stability is investigated of fine powders and sintered pellets of the compounds Mg2Si0.4Sn0.6 and Mg2Si0.6Sn0.4 by heating the samples from room temperature to ~400 °C in air, while measuring powder X-ray diffraction patterns. The diffractograms of the pellets show no significant changes upon heating for several hours, while the powder samples show increasing emergence of a Mg2Sn-rich, Mg2Si1−x Sn x phase, and other impurities upon heating for only several minutes. This is attributed to the larger amount of surface area in the powder samples. The appearance of the Mg2Sn-rich phase is most pronounced for the Sn-rich composition. In addition, the thermal expansion coefficients were extracted from the powder diffraction patterns. All materials have been synthesized by induction-melting followed by ball milling and spark plasma sintering. The thermal conductivity, Seebeck coefficient, electrical resistivity and Hall carrier concentrations have been measured from room temperature to 400 °C on the pellets.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Expansion and Ionic Conductivity · Heusler alloys: electronic and magnetic properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (22)

Show source-provided references
1. Zaitsev VK, Fedorov MI, Gurieva EA, Eremin IS, Konstantinov PP, Samunin AY, Vedernikov MV (2006) Phys Rev B 74:04520710.1103/PhysRevB.74.045207 ↗
2. Zaitsev VK, Fedorov MI, Eremin IS, Gurieva EA (2006) In: Rowe DM (ed) Thermoelectric handbook, macro to nano. CRC Taylor & Francis, Boca Raton, p 29
3. Isoda Y, Nagai T, Fujiu H, Imai Y, Shinohara Y (2007) In: 26th International Conference on Thermoelectrics (ICT 2007), p 25110.1109/ICT.2007.4569472 ↗
4. Gao H, Zhu T, Liu X, Chen L, Zhao X (2011) J Mater Chem 21:593310.1039/c1jm00025j ↗
5. Rowe DM (2006) Thermoelectrics handbook : macro to nano. CRC/Taylor & Francis, Boca Raton
6. Snyder GJ, Toberer ES (2008) Nat Mater 7:10510.1038/nmat2090 ↗
7. Vineis CJ, Shakouri A, Majumdar A, Kanatzidis MG (2010) Adv Mater 22:397010.1002/adma.201000839 ↗
8. Liu W, Tan X, Yin K, Liu H, Tang X, Shi J, Zhang Q, Uher C (2012) Phys Rev Lett 108:16660110.1103/PhysRevLett.108.166601 ↗
9. Liu W, Tang X, Li H, Sharp J, Zhou X, Uher C (2011) Chem Mater 23:525610.1021/cm202445d ↗
10. Zhang Q, He J, Zhu TJ, Zhang SN, Zhao XB, Tritt TM (2008) Appl Phys Lett 93:10210910.1063/1.2981516 ↗
11. Zaitsev VK, Fedorov MI, Gurieva EA, Eremin IS, Konstantinov PP, Samunin AY, Vedernikov MV (2005) In: 24th International Conference on Thermoelectrics (ICT) (IEEE Cat. No. 05TH8854C)
12. Jung I-H, Kang D-H, Park W-J, Kim NJ, Ahn S (2007) Calphad 31:19210.1016/j.calphad.2006.12.003 ↗
13. Sondergaard M, Christensen M, Borup KA, Yin H, Iversen BB (2012) Acta Mater 60:574510.1016/j.actamat.2012.06.050 ↗
14. Søndergaard M, Christensen M, Borup KA, Yin H, Iversen BB (2012) J Electron Mater
15. Adachi S, Oguchi T, Tanida H, Park SY, Shimizu H, Miyatake H, Kamiya N, Shiro Y, Inoue Y, Ueki T, Iizuka T (2001) Nucl Instrum Method A Part 1 711:467–46810.1016/S0168-9002(01)00472-7 ↗
16. Rodriguezcarvajal J (1993) Phys B 192:5510.1016/0921-4526(93)90108-I ↗
17. van der Pauw LJ (1958) Philips Res Rep 13:1–9
18. Borup KA, Toberer ES, Fleurial JP, Snyder GJ, Iversen BB (2012) Rev Sci Instrum (submitted)
19. Iwanaga S, Toberer ES, LaLonde A, Snyder GJ (2011) Rev Sci Instrum 82:06390510.1063/1.3601358 ↗
20. Boudemagh D, Fruchart D, Haettel R, Hlil EK, Lacoste A, Ortega L, Skryabina N, Tobola J, Wolfers P (2011) Diffus Defect B 170:253
21. Fistul VI (1969) Heavily doped semiconductors. Plenum Press, New York
22. Fedorov MI, Zaitsev VK, Vedernikov MV (2006) In: 25th International Conference on Thermoelectrics (IEEE Cat No. 06TH8931C)