Direct-current field dependence of dielectric properties in B2O3-SiO2 glass doped Ba0.6Sr0.4TiO3 ceramics

The Ba0.6Sr0.4TiO3 ceramics doped B2O3-SiO2 glass prepared by a sol-gel process and the effect of glass content on the DC field dependence of dielectric characteristics in Ba0.6Sr0.4TiO3 ceramics were studied. The samples were observed and analysed by SEM and X-ray diffraction. The dielectric constant of a BST sample with 1 mol% B2O3-SiO2 sintered at 1250°C was as good as that of undoped BST sintered at 1340°C. The dielectric constant samples decreases as the applied DC field increases. The influence of the DC field on the loss factor is much less than that on the dielectric constant. With increasing of the applied voltage, the T c was increased and the peaks were surpressed and broadened. With increasing of glass content, the peaks were also surpressed and broadened. The maximum dielectric constant and the percentage change of dielectric constant under a DC field increase.