Sintering and properties of highly donor-doped barium titanate ceramics
Source abstract
Abstract
The electrical properties of donor (La3+) doped BaTiO3 samples with a donor concentration in the range from 0.3 to 1.5 mol.% of La were studied. Samples were sintered at a low partial pressure of oxygen in order to facilitate anomalous grain growth and donor incorporation. In order to optimise the PTCR anomaly, the samples were annealed in air at 1100°C. Results show that with the use of a specific sintering profile PTCR ceramics containing an amount of donor dopant >0.3 mol.%, can be prepared. Heavily doped samples which do not exhibit anomalous grain growth show a core shell structure.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Advanced ceramic materials synthesis
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References (19)
Show source-provided references
1. N. G. Eror and D. M. Smyth, in “The Chemistry of Extended Defects in Non-Metallic Solids,” edited by L. Eyring and M. O Keef (Nord-Holland, Amsterdam, 1970), p. 62.
2. J. Daniels and R. Wernick, Philips. Res. Rep. 31 (1976) 544.
3. M. Drofenik, J. Amer. Ceram. Soc. 70(5) (1987) 311.10.1111/j.1151-2916.1987.tb04999.x ↗
4. I. Zajc and M. Drofenik, J. Mater. Res. 13(3) (1998) 660.10.1557/JMR.1998.0082 ↗
5. A. B. Alles, V. R. Amarakoon and V. L. Burdick, J. Amer. Ceram. Soc. 72(1) (1989) 148.10.1111/j.1151-2916.1989.tb05970.x ↗
6. A. M. J. H. Seuter, Philips Res. Rep. Suppl. 3 (1974) 1.
7. B. C. Lacourse and V. R. W. Amarakoon, J. Amer. Ceram. Soc. 78(12) (1995) 3352.10.1111/j.1151-2916.1995.tb07976.x ↗
8. G. H. Jonker, Mater. Res. Bull. 2 (1967) 401.10.1016/0025-5408(67)90079-7 ↗
9. H. Ueoka and M. Yodogawa, IEEE Trans. Manuf. Techn. 3(2) (1974) 77.10.1109/TMFT.1974.1135679 ↗
10. M. Drofenik, J. Amer. Ceram. Soc. 73(8) (1990) 1587.10.1111/j.1151-2916.1990.tb09800.x ↗
11. R. Bussem and M. Kahn, ibid. 54(9) (1971) 458.10.1111/j.1151-2916.1971.tb12385.x ↗
12. D. Hennings and G. Rosenstein, ibid. 67(4) (1984) 249.10.1111/j.1151-2916.1984.tb18841.x ↗
13. Y. Park and H. G. Kim, ibid. 80(1) (1997) 106.10.1111/j.1151-2916.1997.tb02797.x ↗
14. C. A. Kleint, U. Stuopel and A. Rost, Phys. Stat. Sol. (A) 115 (1989) 165.10.1002/pssa.2211150116 ↗
15. C. V. Lewis and C. R. Catlow, J. Phys. Chem. Solids 47(1) (1986) 89.10.1016/0022-3697(86)90182-4 ↗
16. G. H. Jonker and E. E. Havinga, Mater. Res. Bull. 17 (1982) 345.10.1016/0025-5408(82)90083-6 ↗
17. D. Makovec, Z. Samard Žija, U. Delalut and D. Kolar, J. Amer. Ceram. Soc. 78(8) (1995) 2193.10.1111/j.1151-2916.1995.tb08635.x ↗
18. G. H. Jonker, Solid-State Electronics 7 (1964) 895.10.1016/0038-1101(64)90068-1 ↗
19. B. Hujbrechts, K. Ishizaki and M. TAKATE, J. Amer. Ceram. Soc. 75(3) (1992) 722.10.1111/j.1151-2916.1992.tb07867.x ↗