DataVXACS Applied Electronic MaterialsPaper
journal article·2025-04-08

Exciton Emission in Monolayer Tungsten Disulfide under Synergistic Strain and Electric Field

Guangpeng Zhu, Xiuqi Shi, Maowen Ge, Wenfei Li, Xiang Li, Yidan Hu, Mingming Su, Qianqian Guo, Jiansheng Jie, Wei Du, Tao Wang

ACS Applied Electronic Materials· Volume 7· Issue 7
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Source abstract

Abstract

The substantial exciton binding energy in two-dimensional transition metal dichalcogenide (TMDC) monolayers offers a prime platform for investigating many-body effects and realizing excitonic devices at room temperature. In these monolayers, exciton behaviors can be efficiently modulated by external stimuli, such as temperature, mechanical stress, and electric fields. Particularly, in-plane electrical modulation of exciton emission and distribution has been achieved recently; however, the modulation depth is still too small to support practice application. Here, by combining in-plane electric field with a local strain, we have prominently elevated the modulation depth of exciton emission in monolayer tungsten disulfide (WS 2 ) by ∼3 times. Such modulation relies on both the electric field modulated exciton emission via trap states at the Au-WS 2 interface and the strain field-induced exciton funneling effect at the localized strained area. This work sheds light on the cooperative multifield control of excitonic devices based on monolayer TMDCs.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa, Macao 999078, P. R. China

State Key Laboratory for Bioinspired Interfacial Materials, Institute of Functional Nano & Soft Materials (FUNSOM)

Soochow University

Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices

Funding

Suzhou Key Laboratory of Functional Nano and Soft Materials · Collaborative Innovation Center of Suzhou Nano Science and Technology · Fundo para o Desenvolvimento das Ci?ncias e da Tecnologia · National Natural Science Foundation of China · Science and Technology Program of Suzhou · Higher Education Discipline Innovation Project · Joint International Research Laboratory of Carbon-Based Functional Materials and Devices

References (44)

Show source-provided references
1. 10.1038/nmat420510.1038/nmat4205 ↗
2. 10.1002/smll.20230194910.1002/smll.202301949 ↗
3. 10.1038/s41928-024-01264-310.1038/s41928-024-01264-3 ↗
4. 10.1016/j.physrep.2024.06.00110.1016/j.physrep.2024.06.001 ↗
5. 10.1021/acs.nanolett.1c0116210.1021/acs.nanolett.1c01162 ↗
6. 10.3866/pku.whxb20210801710.3866/pku.whxb202108017 ↗
7. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
8. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
9. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
10. 10.1103/PhysRevLett.121.05740310.1103/PhysRevLett.121.057403 ↗
11. 10.1103/PhysRevB.90.07541310.1103/PhysRevB.90.075413 ↗
12. 10.1021/nl302635710.1021/nl3026357 ↗
13. 10.1002/adma.20200360710.1002/adma.202003607 ↗
14. 10.1103/physrevb.104.l12140810.1103/physrevb.104.l121408 ↗
15. 10.1038/s41467-019-12180-y10.1038/s41467-019-12180-y ↗
16. 10.1038/s41565-022-01115-210.1038/s41565-022-01115-2 ↗
17. 10.1126/sciadv.aat367210.1126/sciadv.aat3672 ↗
18. 10.1126/science.aaw805310.1126/science.aaw8053 ↗
19. 10.1038/s41467-023-42568-w10.1038/s41467-023-42568-w ↗
20. 10.1038/ncomms249810.1038/ncomms2498 ↗
21. 10.1007/s12274-024-6762-710.1007/s12274-024-6762-7 ↗
22. 10.1038/s41467-024-52813-510.1038/s41467-024-52813-5 ↗
23. 10.1007/s12274-015-0895-710.1007/s12274-015-0895-7 ↗
24. 10.1007/s12274-015-0762-610.1007/s12274-015-0762-6 ↗
25. 10.1002/lpor.20230018510.1002/lpor.202300185 ↗
26. 10.1038/s41566-019-0581-510.1038/s41566-019-0581-5 ↗
27. 10.1021/acsnano.2c0230010.1021/acsnano.2c02300 ↗
28. 10.1021/acs.nanolett.0c0275710.1021/acs.nanolett.0c02757 ↗
29. 10.1021/acsnano.2c0095610.1021/acsnano.2c00956 ↗
30. 10.1021/acs.nanolett.3c0077110.1021/acs.nanolett.3c00771 ↗
31. 10.1002/inf2.1217710.1002/inf2.12177 ↗
32. 10.1038/nmat350510.1038/nmat3505 ↗
33. 10.1103/PhysRevB.86.11540910.1103/PhysRevB.86.115409 ↗
34. 10.29026/oea.2023.22003410.29026/oea.2023.220034 ↗
35. 10.1021/acsphotonics.3c0005210.1021/acsphotonics.3c00052 ↗
36. 10.1038/ncomms1505310.1038/ncomms15053 ↗
37. 10.1038/ncomms1509310.1038/ncomms15093 ↗
38. 10.1038/ncomms838110.1038/ncomms8381 ↗
39. 10.1103/PhysRevLett.113.07680210.1103/PhysRevLett.113.076802 ↗
40. 10.1021/acsnano.0c0882810.1021/acsnano.0c08828 ↗
41. 10.1002/adfm.20160306410.1002/adfm.201603064 ↗
42. 10.1126/science.abi919310.1126/science.abi9193 ↗
43. 10.1021/acs.nanolett.2c0131110.1021/acs.nanolett.2c01311 ↗
44. 10.1021/acs.jpcc.2c0693310.1021/acs.jpcc.2c06933 ↗