Notable Voltage Response Photodetector Based on Single-Layer ZnO Macroscopic Pores Structure and GaN Heterojunction

Self-assembly patterning technology is a simple and widely applicable patterning method, but its combination with ultraviolet (UV) photodetectors (PD) has received relatively less attention. In this paper, a self-powered UV PD based on ZnO macroscopic pore(MP) structure fabricated by self-assembly technology is proposed. The self-assembly process can precisely and orderly assemble nanomaterials at the key positions of a photodetector to form structures with special photodetection properties. This innovative integration not only significantly simplifies the manufacturing process of complex structures but also endows the photodetector with unparalleled customizability and multifunctionality. Due to the enhanced light capture capability of the MP with large specific surface area and rich pore structure, charge transport channels are opened, which enable the photogenerated voltage to be generated at lower light power density and reduce the response time. Moreover, due to the material preparation process and the special macroscopic structure, the surface defects increase, thereby adsorbing a large amount of charge to exhibit a capacitive effect, resulting in a high voltage response. Therefore, the maximum photogenerated voltage response of the macroscopic porous structure can reach 2014 V/W. Our research demonstrates that the macroscopic pore structure is of great significance in weak light detection and offers a novel idea for achieving high voltage response.