The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy
Source abstract
Abstract
High-resolution transmission electron microscope (HRTEM) lattice fringe images and lattice parameter maps are used to reveal the rapid modification of InGaN quantum wells by the electron beam in a TEM. Images acquired within seconds of first irradiating a region of quantum well do not exhibit the strong nanometre-scale strain contrast which has been reported to signify the presence of very indium-rich regions in InGaN quantum wells. However, after a very short period of irradiation by a relatively low electron beam current density, images of the specimen could be interpreted as indicating the presence of these indium “clusters”. The beam damage is shown to occur for the InGaN quantum wells grown in our lab as well as those in a commercial blue light emitting diode (LED) and in TEM specimens prepared only using mechanical polishing. Possible mechanisms for the beam damage are discussed and we make suggestions as to what may cause exciton localisation in quantum wells that do not contain gross composition fluctuations.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (42)
Show source-provided references
1. S. Nakamura and S. Chichibu (Eds) “Introduction to Nitride Semiconductor Blue Laser and Light Emitting Diodes” (Taylor & Francis, London, 2000)10.1201/9781482268065 ↗
2. S. Nakamura, Science 281 (1998) 956.10.1126/science.281.5379.956 ↗
3. Idem., Semiconduct. Sci. Technol. 14 (1999) R27.10.1088/0268-1242/14/6/201 ↗
4. S. J. Henley and D. Cherns, J. Appl. Phys. 93 (2003) 393410.1063/1.1559417 ↗
5. P. Gibart, Reports of Progress in Phys. 67 (2004) 667.10.1088/0034-4885/67/5/R02 ↗
6. S. Chichibu, T. Sota, K. Wada and S. Nakamura, J. Vac. Sci. Technol. B 16 (1998) 2204.10.1116/1.590149 ↗
7. K. Osamura, S. Naka and Y. Murakami, J. Appl. Phys. 46 (1975) 3432.10.1063/1.322064 ↗
8. I. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69 (1996) 270110.1063/1.117683 ↗
9. L. K. Teles, J. Furthmüller, L. M. R. Scolfaro, J. R. Leite and F. Bechstedt, Phys. Rev. B 62 (2000) 2475.10.1103/PhysRevB.62.2475 ↗
10. F. A. Ponce, S. Srinivasen, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui and S. Tanaka, Phys. Stat. Sol. (b) 240 (2003) 273.10.1002/pssb.200303527 ↗
11. L. Bellaiche, T. Mattila, L.-W. Wang, S.-H. Wei and A. Zunger, Appl. Phys. Lett. 74 (1999) 184210.1063/1.123687 ↗
12. S. Chichibu, T. Azuhata, T. Sota and S. Nakamura, ibid. 69 (1996) 4188.10.1063/1.116981 ↗
13. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita and S. Nakamura, ibid. 70 (1997) 981.10.1063/1.118455 ↗
14. N. G. Chew and A. G. Cullis, Ultramicroscopy 23 (1987) 175.10.1016/0304-3991(87)90163-X ↗
15. A. N. Westmeyer and S. Mahajan, Appl. Phys. Lett. 79 (2001) 2710.10.1063/1.1411984 ↗
16. Y.-S. Lin, K.-J. Ma, C. Hsu, S.-W. Feng, Y.-C. Cheng, C.-C. Liao, C. C. Yang, C.-C. Chou, C.-M. Lee and J.-I. Chyi, ibid. 77 (2000) 2988.10.1063/1.1323542 ↗
17. H. K. Cho, J. Y. Lee, N. Sharma, C. J. Humphreys, G. M. Yang, C. S. Kim, J. H. Song and P. W. Yu, ibid.. 79 (2001) 2594.10.1063/1.1410362 ↗
18. M. G. Cheong, S. M. Jeong, H. S. Yoon, C. S. Kim, R. J. Choi, E. J. Hwang, E.-K. Suh and H. J. Lee, J. Korean Phys. Soc. 40 (2002) 300.
19. K. Jacobs, B. van Daele, M. R. Leys, I. Moerman and G. van Tendeloo, J. Cryst. Growth 248 (2003) 498.10.1016/S0022-0248(02)01847-X ↗
20. C. Kisielowski, Z. Liliental-Weber and S. Nakamura, Japanese J. Appl. Phys. 36 (1997) 6932.10.1143/JJAP.36.6932 ↗
21. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken and A. Rizzi, Phys. Stat. Sol. (a) 177 (2000) 145.10.1002/(SICI)1521-396X(200001)177:1<145::AID-PSSA145>3.0.CO;2-0 ↗
22. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schön and M. Heuken, Appl. Phys. Lett. 79 (2001) 2552.10.1063/1.1409949 ↗
23. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer and M. Schowalter, Phys. Stat. Sol. (c) 0 (2003) 1668.10.1002/pssc.200303129 ↗
24. Y.-C. Cheng, E.-C. Lin, C.-M. Wu, C. C. Yang, J.-R. Yang, A. Rosenauer, K.-J. Ma, S.-C. Shi, L. C. Chen, C.-C. Pen and J.-I. Chyi, Appl. Phys. Lett. 84 (2004) 2506.10.1063/1.1690872 ↗
25. P. Ruterana, S. Kret, A. Vivet, G. Maciejewski and P. Dluzewski, J. Appl. Phys. 91 (2002) 8979.10.1063/1.1473666 ↗
26. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers and C. J. Humphreys, Appl. Phys. Lett. 83 (2003) 5419.10.1063/1.1636534 ↗
27. M. E. Vickers, M. J. Kappers, T. M. Smeeton, E. J. Thrush, J. S. Barnard and C. J. Humphreys, J. Appl. Phys. 94 (2003) 1565.10.1063/1.1587251 ↗
28. D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys and E. J. Thrush, ibid. 97 (2005) 103508.10.1063/1.1897070 ↗
29. E. J. Kirkland, “Advanced Computing in Electron Microscopy” (Plenum Press, New York, 1998).10.1007/978-1-4757-4406-4 ↗
30. R. F. Egerton, P. Li and M. Malac, Micron 35 (2004) 399.10.1016/j.micron.2004.02.003 ↗
31. L. W. Hobbs, “Radiation effects in analysis of inorganic specimens by TEM” in “Introduction to Analytical Electron Microscopy,” edited by J. J. HREN, J. I. GOLDSTEIN and D. C. JOY (Plenum Press, New York, 1979).10.1007/978-1-4757-5581-7_17 ↗
32. D. B. Williams and C. B. Carter, “Transmission electron microscopy: a textbook for materials science” (Plenum, London, 1996).10.1007/978-1-4757-2519-3 ↗
33. T. J. Eustis and J. Silcox, Microscopy and Microanalysis (1999) 642.10.1017/S1431927600016536 ↗
34. K. A. Mkhoyan and J. Silcox, Appl. Phys. Lett. 82 (2003) 859.10.1063/1.1543642 ↗
35. M. L. Jenkins and M. A. Kirk, “Characterization of radiation damage by transmission electron microscopy” (Institute of Physics Publishing, Bristol, 2001)10.1887/075030748X ↗
36. J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florescu and F. H. Pollak, J. Appl. Phys. 92 (2002) 2534.10.1063/1.1497704 ↗
37. G. A. Evans, J. W. Steeds, L. Ley, M. Hundhausen, N. Schulze and G. Pensl, Phys. Rev. B 66 (2002) 035204.10.1103/PhysRevB.66.035204 ↗
38. N. M. Boyall, K. Durose and I. M. Watson, Mater Res Soc Symposium Proceed 743 (2003) L11.1310.1557/PROC-743-L11.13 ↗
39. R. W. Martin, P. R. Edwards, K. P. O’Donnell, E. G. Mackay and I. M. Watson, Phys. Stat. Sol. (a) 192 (2002) 117.10.1002/1521-396X(200207)192:1<117::AID-PSSA117>3.0.CO;2-W ↗
40. S. D. Baranovski#x012D; and A. L. éfros, Sov. Phys. Semicond. 12 (1978) 1328.
41. H. X. Jiang, J. Y. Lin and W. W. Chow, “Time resolved photoluminescence studies of III-nitrides” in “III-nitride semiconductors: optical properties I,” edited by M. O. MANASREH and H. X. JIANG, (Taylor and Francis, London, 2002)
42. A. Soltani-Vala, M. J. Godfrey and P. Dawson, Phys. Stat. Sol. (b) 228 (2001) 453.10.1002/1521-3951(200111)228:2<453::AID-PSSB453>3.0.CO;2-M ↗