journal article·2001-04

Effect of Er2O3 addition on the microstructure, electrical properties, and stability of Pr6O11-based ZnO ceramic varistors

Choon-Woo Nahm, Choon-Hyun Park

Journal of Materials Science· Volume 36· Issue 7
Publisher page

Abstract

The microstructure, electrical properties, and stability of Pr6O11-based ZnO varistors, which are composed of ZnO-Pr6O11-CoO-Er2O3 systems, were investigated with Er2O3 additive content. The density of ceramics was in the range of 84–88% of TD at 1300 °C and 93–98% of TD at 1350 °C, and greatly affected the stability. Most of the added-Er2O3 were segregated at nodal points. The varistors with 0.5 mol% Er2O3 sintered at 1300 °C exhibited the best nonlinear current-voltage characteristics, which the nonlinear exponent is 52.8 and the leakage current is 9.8 μA. All the varistors sintered at 1300 °C, even under relatively weak stress, exhibited the thermal runaway within short time in order of high leakage current. On the contrary, the stability of varistors sintered at 1350 °C exhibited far higher stability than that at 1300 °C. Particularly, the varistors with 0.5 mol% Er2O3 exhibited not only relatively good nonlinear current-voltage characteristics, which the nonlinear exponent is 34.8 and the leakage current is 7.4 μA, but also excellent stability, which the variation rates of varistor voltage, nonlinear exponent, and leakage current are below 1%, 3%, and 3%, respectively, even under more severe stress such as (0.80 V 1 mA/90 °C/12 h) + (0.85 V 1 mA/115 °C/12 h) + (0.90 V 1 mA/120 °C/12 h).
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Thermal Expansion and Ionic Conductivity · ZnO doping and properties · Engineering Applied Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (14)

Show source-provided references
1. L.M. Levinson and H.R. Pilipp, Am. Ceram. Soc. Bull. 65 (1986) 639.
2. T.K. Gupta, J. Amer. Ceram. Soc. 73 (1990) 1817.10.1111/j.1151-2916.1990.tb05232.x ↗
3. S.Y. Chun, N. Wakiya, K. Shnozaki and N. Mizutani, Jpn. J. Ceram. Soc. 104 (1996) 1056.10.2109/jcersj.104.1056 ↗
4. Y.S. Lee and T.Y. Tseng, J. Amer. Ceram. Soc. 75 (1992) 1636.10.1111/j.1151-2916.1992.tb04236.x ↗
5. A.B. Alles and V.L. Burdick, J. Appl. Phys. 70 (1991) 6883.10.1063/1.349812 ↗
6. A.B. Alles, R. Puskas, G. Callahan and V.L. Burdick, J. Amer. Ceram. Soc. 76 (1993) 2098.10.1111/j.1151-2916.1993.tb08339.x ↗
7. Y.-S. Lee, K.-S. Liao and T.-Y. Tseng, ibid. 79 (1996) 2379.10.1111/j.1151-2916.1996.tb08986.x ↗
8. C.-W. Nahm and C.-H. Park, J. Mater. Sci. 35 (2000) 3037.10.1023/A:1004749214640 ↗
9. C.-W. Nahm, C.-H. Park and H.-S. Yon, J. Mater. Sci. Lett. 19 (2000) 271.10.1023/A:1006781823837 ↗
10. Idem., ibid. 19 (2000) 725.10.1023/A:1006739421559 ↗
11. M. Mukae, K. Tsuda and I. Nagasawa, J. Appl. Phys. 50 (1979) 4475.10.1063/1.326411 ↗
12. L. Hozer, “Semiconductor Ceramics: Grain Boundary Effects” (Ellis Horwood, 1994) p. 22.
13. J.C. Wurst and J.A. Nelson, J. Amer. Ceram. Soc. 97–12 (1972) 109.10.1111/j.1151-2916.1972.tb11224.x ↗
14. T.K. Gupta and W.G. Carlson, J. Mater. Sci. 20 (1985) 3487.10.1007/BF01113755 ↗