Morphologies and growth mechanisms of aluminum nitride whiskers by SHS method—Part 2
Source abstract
Abstract
The high resolution electron microscopy was used to investigate the microstructure of AlN whiskers. The growth mechanisms of AlN whiskers were VLS and VS mechanism. The phenomenon of stacking fault was analyzed. Moreover, the growth mechanism of dendritic crystal was proposed.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Advanced ceramic materials synthesis
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References (11)
Show source-provided references
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