Three-Dimensional Resistive Random-Access Memory Based on Stacked Double-Tip Silicon Nanowires for Neuromorphic Systems
Source abstract
Abstract
Resistive random-access memory (RRAM) has garnered attention as a synaptic device for neuromorphic systems. However, RRAM typically suffers from various issues, such as a high-forming voltage and significant variation in switching behaviors. To address these, we propose three-dimensional-stacked RRAM based on stacked double-tip Si nanowires. Sharp-tipped Si electrodes reduce the switching voltage through the field concentration effect and minimize cycle-to-cycle variation by effectively controlling the location of conductive filament formation. Additionally, our analysis explored how these benefits enhance the accuracy of neuromorphic systems. In pattern recognition tasks using the Modified National Institute of Standards and Technology database, we achieved an accuracy of 85%, which is 47% higher compared with that of devices that do not utilize the double-tip structure.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering
University of Seoul
Department of Computer Science and Engineering
Incheon National University
Funding
National Research Foundation of Korea
References (61)
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