From Memory Traces to Surface Chemistry: Decoding REDOX Reactions
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nanoscaled, cost-effective, and environmentally sustainable sensor solutions. These sensors encode readouts in resistance state changes based on gas concentration, yet their nonlinear current–voltage characteristics offer richer dynamics, capturing detailed information about REDOX reactions and surface kinetics. Traditional vertical devices fail to fully exploit this complexity. This study demonstrates planar resistive switching devices, moving beyond the Butler–Volmer model. A systematic investigation of the electrochemical processes in Na-doped ZnO with lateral planar contacts reveals intricate patterns resulting from REDOX reactions on the device surface. When combined with advanced algorithms for pattern recognition, these allow the analysis of complex switching patterns, including crossings, loop directions, and resistance values, providing unprecedented insights for next-generation complex sensors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Gas Sensing Nanomaterials and Sensors · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Departamento de Física
Universidade Federal de São Carlos
Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland
Julius-Maximilians-Universität Würzburg
Funding
Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico · Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo · Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior
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