Perforated Turbostratic Graphene As Active Layer in a Nonvolatile Resistive Switching Memory Device

Perforated turbostratic graphene (PTG) sheets have been synthesized from a natural waste material, dead bougainvillea bracts, using a single-step pyrolysis method, and a resistive switching (RS) memory device has been constructed with it for the very first time. Herein, the edges of these large-area multilayer graphene sheets are highly conducting due to the turbostratic stacking between the adjacent layers of the graphene sheets. These highly conducting PTG sheets embedded inside an insulating polymer matrix can act as an active layer for resistive switching memory devices. This hybrid structure shows nonlinear resistance change between two distinct resistance states by simple bias voltage variation. The trap-assisted space-charge-limited conduction can realize the high resistive state (HRS), whereas the low resistive state (LRS) takes place through direct conduction. To achieve the best performing device, a number of optimizations have been performed, like the variation of polymer matrices, variation of PTG and polymer concentration, active layer thickness variation, and top electrode area variation. The best performing device showed reproducibility of current–voltage data (>200 cycles), low power consumption (SET voltage <1 V), a high ON/OFF ratio (>10 4 ), a long retention time (>10 4 s), and a large number of endurance cycles (>10 3 ). High writing-read-erase-read speed and flexibility/bending cycle tests were also carried out on the best-performing device to examine its tenacity. The current PTG-based flexible RS memory device derived from a biowaste, dead bougainvillea bracts, can provide an important step toward developing green electronics.