Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures
Source abstract
Abstract
Exciton localization phenomena are considered here to comprehend the high internal quantum efficiency in InGaN/GaN multiple-quantum-well structures having discrete quantum dots (QDs) prepared by metal–organic-chemical-vapor deposition method on c-sapphire substrates. Spectroscopic results from the variable-temperature steady-state-photoluminescence and time-resolved photoluminescence (TRPL) are investigated. While the exciton localization is enhanced by strong localized states within the InGaN/GaN QDs–the impact of free carrier recombination cannot be ignored. The observed non-exponential decay in TRPL measurements is explained using a model by meticulously including localized exciton, non-radiative and free carrier recombination rates. A new method is proposed to calculate the internal quantum efficiency, which is supplementary to the traditional approach based on temperature-dependent photoluminescence measurement.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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