Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material
Source abstract
Abstract
This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeO x (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at the Au/SFO interface by eliminating surface damage caused by gold atoms during evaporation. As a result, the memristor’s ON/OFF current ratio improved from 25 to 4000, and resistance dispersion decreased from 32.4% to 3.8%. The memristor also achieved 91.5% accuracy in the VGG16 network for CIFAR-10 image recognition.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430078, China
Funding
Research Grants Council, University Grants Committee · National Key Research and Development Program of China · Fundamental Research Funds for the Central Universities
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