High-performance photodetector based on ReS2/WSe2/Te dual van der Waals heterojunctions
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OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials
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References (54)
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1. Yan F, Wei Z, Wei X, Lv Q, Zhu W, Wang K (2018) Toward high-performance photodetectors based on 2D materials: strategy on methods. Small Methods 2(5):1700349. https://doi.org/10.1002/smtd.20170034910.1002/smtd.201700349 ↗
2. Chen Y, Wang X, Huang L et al (2021) Ferroelectric-tuned van der Waals heterojunction with band alignment evolution. Nat Commun 12(1):4030. https://doi.org/10.1038/s41467-021-24296-110.1038/s41467-021-24296-1 ↗
3. Cheng R, Wang F, Yin L, Wang Z, Wen Y, Shifa TA, He J (2018) High-performance, multifunctional devices based on asymmetric van der Waals heterostructures. Nat Electr 1(6):356–361. https://doi.org/10.1038/s41928-018-0086-010.1038/s41928-018-0086-0 ↗
4. Xin Y, Wang X, Chen Z et al (2020) Polarization-sensitive self-powered type-II GeSe/MoS2 van der Waals heterojunction photodetector. ACS Appl Mater Interfaces 12(13):15406–15413. https://doi.org/10.1021/acsami.0c0140510.1021/acsami.0c01405 ↗
5. Li K, Wang W, Li J, Jiang W, Feng M, He Y (2020) High-responsivity, self-driven photodetectors based on monolayer WS2/GaAs heterojunction. Photon Res 8(8):1368–1374. https://doi.org/10.1364/PRJ.39688010.1364/PRJ.396880 ↗
6. Qin F, Gao F, Dai M et al (2020) Multilayer InSe–Te van der waals heterostructures with an ultrahigh rectification ratio and ultrasensitive photoresponse. ACS Appl Mater Interfaces 12(33):37313–37319. https://doi.org/10.1021/acsami.0c0846110.1021/acsami.0c08461 ↗
7. Wu W, Zhang Q, Zhou X, Li L, Su J, Wang F, Zhai T (2018) Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures. Nano Energy 51:45–53. https://doi.org/10.1016/j.nanoen.2018.06.04910.1016/j.nanoen.2018.06.049 ↗
8. Wu F, Li Q, Wang P et al (2019) High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region. Nat Commun 10(1):4663. https://doi.org/10.1038/s41467-019-12707-310.1038/s41467-019-12707-3 ↗
9. Dai M, Chen H, Wang F et al (2020) Ultrafast and sensitive self-powered photodetector featuring self-limited depletion region and fully depleted channel with van der Waals contacts. ACS Nano 14(7):9098–9106. https://doi.org/10.1021/acsnano.0c0432910.1021/acsnano.0c04329 ↗
10. Ouyang W, Teng F, He JH, Fang X (2019) Enhancing the photoelectric performance of photodetectors based on metal oxide semiconductors by charge-carrier engineering. Adv Func Mater 29(9):1807672. https://doi.org/10.1002/adfm.20180767210.1002/adfm.201807672 ↗
11. Chow PC, Matsuhisa N, Zalar P, Koizumi M, Yokota T, Someya T (2018) Dual-gate organic phototransistor with high-gain and linear photoresponse. Nat Commun 9(1):4546. https://doi.org/10.1038/s41467-018-06907-610.1038/s41467-018-06907-6 ↗
12. Wang Y, Qiu G, Wang R et al (2018) Field-effect transistors made from solution-grown two-dimensional tellurene. Nat Electr 1(4):228–236. https://doi.org/10.1038/s41928-018-0058-410.1038/s41928-018-0058-4 ↗
13. Castellanos-Gomez A, Buscem M, Molenaar R, Singh V, Janssen L, Van Der Zant HS, Steele GA (2014) Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 4D Mater 1(1):011002. https://doi.org/10.1088/2053-1583/1/1/01100210.1088/2053-1583/1/1/011002 ↗
14. Liu F, Zheng S, He X et al (2016) Highly sensitive detection of polarized light using anisotropic 2D ReS2. Adv Func Mater 26(8):1169–1177. https://doi.org/10.1002/adfm.20150454610.1002/adfm.201504546 ↗
15. Zhang E, Jin Y, Yuan X et al (2015) ReS2-based field-effect transistors and photodetectors. Adv Func Mater 25(26):4076–4082. https://doi.org/10.1002/adfm.20150096910.1002/adfm.201500969 ↗
16. Zhao W, Ghorannevi Z, Amara KK et al (2013) Lattice dynamics in mono-and few-layer sheets of WS2 and WSe2. Nanoscale 5(20):9677–9683. https://doi.org/10.1039/C3NR03052K10.1039/C3NR03052K ↗
17. Campbell PM, Tarasov A, Joiner CA et al (2016) Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2. Nanoscale 8(4):2268–2276. https://doi.org/10.1039/C5NR06180F10.1039/C5NR06180F ↗
18. Havener RW, Zhuang H, Brown L, Hennig RG, Park J (2012) Angle-resolved Raman imaging of interlayer rotations and interactions in twisted bilayer graphene. Nano Lett 12(6):3162–3167. https://doi.org/10.1021/nl301137k10.1021/nl301137k ↗
19. Liu K, Zhang L, Cao T et al (2014) Evolution of interlayer coupling in twisted molybdenum disulfide bilayers. Nat Commun 5(1):4966. https://doi.org/10.1038/ncomms596610.1038/ncomms5966 ↗
20. Nayak PK, Horbatenko Y, Ahn S et al (2017) Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2 van der Waals heterostructures. ACS Nano 11(4):4041–4050. https://doi.org/10.1021/acsnano.7b0064010.1021/acsnano.7b00640 ↗
21. Chiu MH, Li MY, Zhang G et al (2014) Spectroscopic signatures for interlayer coupling in MoS2–WSe2 van der Waals stacking. ACS nano 8(9):9649–9656. https://doi.org/10.1021/nn504229z10.1021/nn504229z ↗
22. Mak KF, Lee C, Hone J, Shan J, Heinz TF (2010) Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett 105(13):136805. https://doi.org/10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
23. Splendiani A, Sun L, Zhang Y et al (2010) Emerging photoluminescence in monolayer MoS2. Nano Lett 10(4):1271–1275. https://doi.org/10.1021/nl903868w10.1021/nl903868w ↗
24. Varghese A, Saha D, Thakar K et al (2019) Near-direct bandgap WSe2/ReS2 type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics. Nano Lett 20(3):1707–1717. https://doi.org/10.1021/acs.nanolett.9b0487910.1021/acs.nanolett.9b04879 ↗
25. Luo Z, Yang M, Wu D et al (2022) Rational design of WSe2/WS2/WSe2 dual junction phototransistor incorporating high responsivity and detectivity. Small Methods 6(9):2200583. https://doi.org/10.1002/smtd.20220058310.1002/smtd.202200583 ↗
26. Huang Z, Zhou Y, Luo Z et al (2022) Integration of photovoltaic and photogating effects in a WSe2/WS2/p-Si dual junction photodetector featuring high-sensitivity and fast-response. Nanoscale Adv 5(3):675–684. https://doi.org/10.1039/d2na00552b10.1039/d2na00552b ↗
27. Wang W, Wang W, Meng Y et al (2022) Mixed-dimensional anti-ambipolar phototransistors based on 1D GaAsSb/2D MoS2 heterojunctions. ACS Nano 16(7):11036–11048. https://doi.org/10.1021/acsnano.2c0367310.1021/acsnano.2c03673 ↗
28. Lee YT, Jeon PJ, Han JH et al (2017) Mixed-dimensional 1D ZnO–2D WSe2 van der waals heterojunction device for photosensors. Adv Func Mater 27(47):1703822. https://doi.org/10.1002/adfm.20170382210.1002/adfm.201703822 ↗
29. Tan C, Yin S, Chen J et al (2021) Broken-gap PtS2/WSe2 van der Waals heterojunction with ultrahigh reverse rectification and fast photoresponse. ACS Nano 15(5):8328–8337. https://doi.org/10.1021/acsnano.0c0959310.1021/acsnano.0c09593 ↗
30. Wang W, Meng Y, Wang W et al (2022) Highly efficient full van der Waals 1D p-Te/2D n-Bi2O2Se heterodiodes with nanoscale ultra-photosensitive channels. Adv Func Mater 32(30):2203003. https://doi.org/10.1002/adfm.20220300310.1002/adfm.202203003 ↗
31. Long M, Liu E, Wang P et al (2016) Broadband photovoltaic detectors based on an atomically thin heterostructure. Nano Lett 16(4):2254–2259. https://doi.org/10.1021/acs.nanolett.5b0453810.1021/acs.nanolett.5b04538 ↗
32. Jiang Y, Wang R, Li X et al (2021) Photovoltaic field-effect photodiodes based on double van der Waals heterojunctions. ACS Nano 15(9):14295–14304. https://doi.org/10.1021/acsnano.1c0283010.1021/acsnano.1c02830 ↗
33. Choi W, Akhtar I, Kang D, Lee YJ, Jung J, Kim YH, Seo Y (2020) Optoelectronics of multijunction heterostructures of transition metal dichalcogenides. Nano Letters 20(3):1934–1943. https://doi.org/10.1021/acs.nanolett.9b0521210.1021/acs.nanolett.9b05212 ↗
34. Zeng P, Wang W, Han D et al (2022) MoS2/WSe2 vdW heterostructures decorated with PbS quantum dots for the development of high-performance photovoltaic and broadband photodiodes. ACS Nano 16(6):9329–9338. https://doi.org/10.1021/acsnano.2c0201210.1021/acsnano.2c02012 ↗
35. Long M, Wang P, Fang H, Hu W (2019) Progress, challenges, and opportunities for 2D material based photodetectors. Adv Func Mater 29(19):1803807. https://doi.org/10.1002/adfm.20180380710.1002/adfm.201803807 ↗
36. Koppens FHL, Mueller T, Avouris P, Ferrari AC, Vitiello MS, Polini M (2014) Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat Nanotechnol 9(10):780–793. https://doi.org/10.1038/nnano.2014.21510.1038/nnano.2014.215 ↗
37. Clifford JP, Konstantatos G, Johnston KW, Hoogland S, Levina L, Sargent EH (2009) Fast, sensitive and spectrally tuneable colloidal-quantum-dot photodetectors. Nat Nanotechnol 4(1):40–44. https://doi.org/10.1038/nnano.2008.31310.1038/nnano.2008.313 ↗
38. Zheng Z, Yao J, Xiao J, Yang G (2016) Synergistic effect of hybrid multilayer In2Se3 and nanodiamonds for highly sensitive photodetectors. ACS Appl Mater Interfaces 8(31):20200–20211. https://doi.org/10.1021/acsami.6b0653110.1021/acsami.6b06531 ↗
39. Zhou X, Gan L, Tian W et al (2015) Ultrathin SnSe2 flakes grown by chemical vapor deposition for high-performance photodetectors. Adv Mater 27(48):8035–8041. https://doi.org/10.1002/adma.20150387310.1002/adma.201503873 ↗
40. Zheng Z, Yao J, Yang G (2017) Centimeter-scale deposition of Mo0.5W0.5Se2 alloy film for high-performance photodetectors on versatile substrates. ACS Appl Mater Interfaces 9(17):14920–14928. https://doi.org/10.1021/acsami.7b0216610.1021/acsami.7b02166 ↗
41. Luo P, Wang F, Qu J, Liu K, Hu X, Liu K, Zhai T (2021) Self-driven WSe2/Bi2O2Se van der Waals heterostructure photodetectors with high light on/off ratio and fast response. Adv Func Mater 31(8):2008351. https://doi.org/10.1002/adfm.20200835110.1002/adfm.202008351 ↗
42. Lu Y, Wang Y, Xu C et al (2021) Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications. Nanoscale 13(16):7606–7612. https://doi.org/10.1039/D1NR00333J10.1039/D1NR00333J ↗
43. Zheng Z, Yao J, Yang G (2017) Self-assembly of the lateral In2Se3/CuInSe2 heterojunction for enhanced photodetection. ACS Appl Mater Interfaces 9(8):7288–7296. https://doi.org/10.1021/acsami.6b1632310.1021/acsami.6b16323 ↗
44. Dai M, Chen H, Feng R et al (2018) A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction. ACS Nano 12(8):8739–8747. https://doi.org/10.1021/acsnano.8b0493110.1021/acsnano.8b04931 ↗
45. Jia S, Jin Z, Zhang J et al (2020) Lateral monolayer MoSe2–WSe2 p–n heterojunctions with giant built-in potentials. Small 16(34):2002263. https://doi.org/10.1002/smll.20200226310.1002/smll.202002263 ↗
46. Liao F, Deng J, Chen X et al (2019) A dual-gate MoS2 photodetector based on interface coupling effect. Small 16(1):1904369. https://doi.org/10.1002/smll.20190436910.1002/smll.201904369 ↗
47. Tsai TH, Liang ZY, Lin YC, Wang CC, Lin KI, Suenaga K, Chiu PW (2020) Photogating WS2 photodetectors using embedded WSe2 charge puddles. ACS Nano 14(4):4559–4566. https://doi.org/10.1021/acsnano.0c0009810.1021/acsnano.0c00098 ↗
48. Gao F, Chen H, Feng W et al (2021) High-performance van der waals metal-insulator-semiconductor photodetector optimized with valence band matching. Adv Func Mater 31(35):2104359. https://doi.org/10.1002/adfm.20210435910.1002/adfm.202104359 ↗
49. Shen C, Liu Y, Wu J et al (2019) Tellurene photodetector with high gain and wide bandwidth. ACS Nano 14(1):303–310. https://doi.org/10.1021/acsnano.9b0450710.1021/acsnano.9b04507 ↗
50. Li J, Cao D, Chen F et al (2022) Polarity-reversible Te/WSe2 van der Waals heterodiode for a logic rectifier and polarized short-wave infrared photodetector. ACS Appl Mater Interfaces 14(47):53202–53212. https://doi.org/10.1021/acsami.2c1733110.1021/acsami.2c17331 ↗
51. Zhao D, Chen Y, Jiang W et al (2021) Gate-tunable photodiodes based on mixed-dimensional Te/MoTe2 van der waals heterojunctions. Adv Electr Mater 7(5):2001066. https://doi.org/10.1002/aelm.20200106610.1002/aelm.202001066 ↗
52. Chen P, Zhang TT, Xiang J et al (2016) Gate tunable WSe2–BP van der Waals heterojunction devices. Nanoscale 8(6):3254–3258. https://doi.org/10.1039/C5NR09218C10.1039/C5NR09218C ↗
53. Jo SH, Lee HW, Shim J, Heo K, Kim M, Song YJ, Park JH (2018) Highly efficient infrared photodetection in a gate-controllable van der waals heterojunction with staggered bandgap alignment. Adv Sci 5(4):1700423. https://doi.org/10.1002/advs.20170042310.1002/advs.201700423 ↗
54. Yang M, Luo Z, Gao W et al (2022) Robust deposition of sub-millimeter WSe2 drive ultrasensitive gate-tunable 2D material photodetectors. Adv Opt Mater 10(19):2200717. https://doi.org/10.1002/adom.20220071710.1002/adom.202200717 ↗