Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors
Source abstract
Abstract
Moving toward the future computing and non-volatile memory, memristors have gained wide attention for their in-memory computing and neuromorphic computing applications. The resistive switching dynamics in oxide-based memristors rely critically on oxygen ions and their recombination with oxygen vacancies to partially rupture and form the conductive filament (CF) for modulating the device between the low resistance state and high resistance state. In this study, we investigated the effect of oxygen ion concentration at the HfOx/Ti interface on the behavior of HfOx-based filamentary memristors. Devices with higher oxygen ion concentrations at the HfOx surface were fabricated by treating with oxygen plasma at various times on the as grown ~ 5 nm HfOx active layer via atomic layer deposition. Detailed X-ray photoelectron spectroscopy and depth profile analyses verify the excess oxygen ion presence at the HfOx surface, and the formation of a thin TiOx layer between the HfOx and Ti layers, resulting in a HfOx/TiOx/Ti interface structure. This work demonstrates the importance of interface chemistry at the HfOx/Ti interface region and its oxygen ion motion for controlled growth of the CF during memristor set operation, which is favorable for analog logic computation. While the components of improving the memristor performance, offering multilevel resistance states, and enhancing the resistance controllability are all have been achievable, displaying a gradual SET behavior in HfOx-based memristor still remains as a challenge. Overcoming this obstacle in the HfOx-based memristor can lead to a tremendous progress toward controlling the resistance on the SET side, which can be thus programmable and be useful for analog logic computation based on spiking networks. This work demonstrates the importance of oxygen ion concentration at the HfOx/Ti interface and its motion for controlled growth of the CF during memristor set operation for resistance controllability.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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