Self-powered ultraviolet photodetector based on CuGaO/ZnSO heterojunction
Source abstract
Abstract
A heterojunction photodetector formed by CuO–Ga (CuGaO) and ZnO–S (ZnSO) thin film has been fabricated by solution combustion synthesis and magnetron sputtering. The band structure of CuGaO/ZnSO heterojunction is studied by using X-ray photoelectron spectroscopy. The valance band offset of CuGaO/ZnSO is calculated to be 0.38 eV by using the Kraut equation. The device shows a responsivity of 3.78 mA/W and a detectivity of 1.16 × 1010 Jones under 365 nm ultraviolet (UV) illumination, when operated as a self-powered (zero bias) UV photodetector. The average rise and decay times can be calculated as 0.034 s and 0.027 s, respectively. The CuGaO/ZnSO heterojunction is a promising candidate for the application in self-powered UV photodetection.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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