Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity
Source abstract
Abstract
A high-quality ZnTe and TeO2 (ZTO) composite is grown on an n-type silicon substrate, using a modified metal-assisted chemical vapor deposition method. Self-powered photodetector based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity is obtained. The photosensitive detection performances of the ZTO composite/Si heterojunction photodetector are assessed using photoresponse spectrum. The photodetector shows ultra-broadband photoresponsivity from UV to NIR lights as ZnTe has a moderate, direct band gap of 2.26 eV, TeO2 has a wide band gap of 4.0 eV, and Si has a narrow band gap of 1.12 eV. Upon exposure to 850 nm light at a zero-bias voltage, the detector shows a high responsivity of 75 mA/W, detectivity of 1.4 × 1013 cm Hz1/2/W, fast response and recovery properties with response and recovery times both below 0.61 s, respectively. The working mechanism is illustrated from the band energy diagram of ZnTe/Si heterojunction and the high transmittance of TeO2.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. Yang L, Wang S, Zeng Q, Zhang Z, Peng LM (2013) Carbon nanotube photoelectronic and photovoltaic devices and their applications in infrared detection. Small 9:1225–123610.1002/smll.201203151 ↗
2. Xu Z, Lin S, Li X, Zhang S, Wu Z, Xu W, Lu Y, Xu S (2016) Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity. Nano Energy 23:89–9610.1016/j.nanoen.2016.03.011 ↗
3. Boutramine A, Nafidi A, Barkissy D, Hannour A, Elanique A, Gouti TE (2016) Application of the transition semiconductor to semimetal in type II nanostructure superlattice for mid-infrared optoelectronic devices. Appl Phys A Mater 122:33010.1007/s00339-016-9911-3 ↗
4. Naquin C, Lee M, Edwards H, Mathur G, Chatterjee T, Maggio K (2014) Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors. Appl Phys Lett 105:21350710.1063/1.4902919 ↗
5. Yusoff MZM, Hassan Z, Ahmed NM, Hassan HA, Abdullah MJ, Rashid M (2013) pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy. Mater Sci Semicond Process 16:1859–186410.1016/j.mssp.2013.07.015 ↗
6. Wang Z, Yu R, Wen X, Liu Y, Pan C, Wu W, Wang ZL (2014) Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect. ACS Nano 8:12866–1287310.1021/nn506427p ↗
7. Avasthi S, Lee S, Loo YL, Sturm JC (2011) Role of majority and minority carrier barriers silicon/organic hybrid heterojunction solar cells. Adv Mater 23:5762–576610.1002/adma.201102712 ↗
8. Masuko K, Shigematsu M, Hashiguchi T et al (2014) Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell. IEEE J Photovolt 4:1433–143510.1109/JPHOTOV.2014.2352151 ↗
9. Shaygan M, Davami K, Jin B, Gemming T, Leed JS, Meyyappan M (2016) Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio. J Mater Chem C 4:2040–204610.1039/C5TC03999A ↗
10. Olusola OI, Salim HI, Dharmadasa IM (2016) One-sided rectifying p–n junction diodes fabricated from n-CdS and p-ZnTe: Te semiconductors. Mater Res Express 3:9590410.1088/2053-1591/3/9/095904 ↗
11. Hou L, Zhang Q, Ling L, Li CX, Chen L, Chen S (2013) Interfacial fabrication of single-crystalline ZnTe nanorods with high blue fluorescence. J Am Chem Soc 135:10618–1062110.1021/ja4047476 ↗
12. Shaygan M, Davami K, Jin B, Gemming T, Lee JS, Meyyappan M (2016) Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio. J Mater Chem C 4:2040–204610.1039/C5TC03999A ↗
13. Jiao S, Shen Q, Mora-Sero I, Wang J, Pan ZX, Zhao K, Kuga Y, Zhong XH, Bisquert J (2015) Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells. ACS Nano 9:908–91510.1021/nn506638n ↗
14. Lee KS, Oh G, Chu D, Pak SW, Kim EK (2017) High power conversion efficiency of intermediate band photovoltaic solar cell based on Cr-doped ZnTe. Sol Energy Mater Sol C 170:27–3210.1016/j.solmat.2017.05.020 ↗
15. Naseri M, Jalilian J, Reshak AH (2017) Electronic and optical properties of paratellurite TeO2 under pressure: a first-principles calculation. Optik 139:9–1510.1016/j.ijleo.2017.03.108 ↗
16. Vu K, Farahani S, Madden S (2015) 980 nm pumped erbium doped tellurium oxide planar rib waveguide laser and amplifier with gain in S, C and L band. Opt Express 23:747–75510.1364/OE.23.000747 ↗
17. Dewan N, Sreenivas K, Gupta (2007) Properties of crystalline γ-TeO2 thin film. J Cryst Growth 305:237–24110.1016/j.jcrysgro.2007.03.054 ↗
18. Liu X, Ji X, Liu M et al (2015) High-performance Ge quantum dot decorated graphene/zinc-oxide heterostructure infrared photodetector. ACS Appl Mater Interfaces 7:2452–245810.1021/am5072173 ↗
19. Kim DC, Jung BO, Lee JH, Cho HK, Lee JY, Lee JH (2011) Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers. Nanotechnology 22:26550610.1088/0957-4484/22/26/265506 ↗
20. Lu S, Qi J, Liu S, Zhang Z et al (2014) Piezotronic interface engineering on ZnO/Au-based Schottky junction for enhanced photoresponse of a flexible self-powered UV detector. ACS Appl Mater Interfaces 6:14116–1412210.1021/am503442c ↗
21. Sun HX, Lei TY, Tian W, Cao FR, Xiong J, Li L (2017) Self-powered, flexible, and solution-processable perovskite photodetector based on low-cost carbon cloth. Small 13:170104210.1002/smll.201701042 ↗
22. An Q, Meng X, Xiong K, Qiu Y (2017) Self-powered ZnS nanotubes/Ag nanowires MSM UV photodetector with high on/off ratio and fast response speed. Sci Rep 7:488510.1038/s41598-017-05176-5 ↗
23. Gao Z, Jin W, Zhou Y et al (2013) Self-powered flexible and transparent photovoltaic detectors based on CdSe nanobelt/graphene Schottky junctions. Nanoscale 5:5576–558110.1039/c3nr34335a ↗
24. Luo LB, Hu H, Wang XH, Lu R, Zou YF, Yu YQ, Liang FX (2015) A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity. J Mater Chem C 3:4723–472810.1039/C5TC00449G ↗
25. Li Q, Wei L, Xie Y et al (2013) ZnO nanoneedle/H2O solid-liquid heterojunction-based self-powered ultraviolet detector. Nanoscale Res Lett 8:41510.1186/1556-276X-8-415 ↗
26. Hong Q, Cao Y, Xu J, Lu H, He J, Sun JL (2014) Self-powered ultrafast broadband photodetector based on p–n heterojunctions of CuO/Si nanowire array. ACS Appl Mater Interfaces 6:20887–2089410.1021/am5054338 ↗
27. Rai SC, Wang K, Chen J, Marmon JK, Bhatt M, Wozny S, Zhang Y, Zhou W (2015) Enhanced broad band photodetection through piezo-phototronic effect in CdSe/ZnTe core/shell nanowire array. Adv Electron Mater 1:140005010.1002/aelm.201400050 ↗