Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films
Source abstract
Abstract
CdZnO thin films with a nominal thickness of ~200 nm were grown on c-plane sapphire substrates by dual ion-beam sputtering deposition technique. The effect of substrate temperature (300–600 °C) and gas ambience on structural, morphological, compositional and opto-electronic properties was studied. X-ray diffraction patterns confirmed that all the films were polycrystalline in nature and were preferentially oriented along the c-axis. It was revealed that the films grown at Ar/O2 ratio of 4:1 were structurally more ordered and the film quality was found to be the best at 500 °C. The compositional studies specify that approximately 11.8 at.% of cadmium were present in the film deposited at 300 °C in Ar–O2 mixture. Investigations on optical properties by photoluminescence and absorption studies indicate band gap shrinkage with the increase in argon partial pressure and substrate temperature. It was found that photosensitivity of the deposited films was highly dependent on growth conditions. The photosensitivity was found to be 5000-fold higher for CdZnO film grown at 600 °C in Ar–O2 ambience compared to the best reported result, and this was promising to realize high-performance opto-electronic devices on such CdZnO films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Tsukazaki A, Ohtomo A, Onuma T et al (2005) Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat Mater Lett 4:42–4610.1038/nmat1284 ↗
2. Mohanta A, Thareja RK (2008) Photoluminescence study of ZnCdO alloy. J Appl Phys 103:24901–2490510.1063/1.2830985 ↗
3. Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T, Koinuma H (2001) Band gap engineering based on Mg x Zn1−x O and Cd y Zn1−y O ternary alloy films. Appl Phys Lett 78:1237–123910.1063/1.1350632 ↗
4. Sadofev S, Blumstengel S, Cui J, Puls J, Rogaschewski S, Schafer P, Henneberger F (2006) Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy. Appl Phys Lett 89:20190710.1063/1.2388250 ↗
5. Ishihara J, Nakamura A, Shigemori S, Aoki T, Temmyo J (2006) Zn1−x Cd x O systems with visible band gaps. Appl Phys Lett 89:09191410.1063/1.2345232 ↗
6. Choi Y, Lee C, Cho S (1996) Transparent conducting Zn x Cd1−x O thin films prepared by the sol–gel process. Thin Solid Films 289:153–15810.1016/S0040-6090(96)08923-7 ↗
7. Brown JJ, Hummel FA (1964) Phase equilibria and manganese-activated luminescence in the systems CdO–P2O5 and Zn2P2O7–Cd2P2O7; summary for the system ZnO–CdO–P2O5. J Electrochem Soc 111:1052–105710.1149/1.2426316 ↗
8. Tortosa M, Mollar M, Mari B (2007) Synthesis of ZnCdO thin films by electrodeposition. J Cryst Growth 304:97–10210.1016/j.jcrysgro.2007.02.010 ↗
9. Caglar Y, Caglar M, Ilican S, Ates A (2009) Morphological, optical and electrical properties of CdZnO prepared by sol–gel method. J Phys D 42:06542110.1088/0022-3727/42/6/065421 ↗
10. Tabet-Derraz H, Benramdane N, Nacer D, Bouzidi A, Medles M (2002) Investigations on Zn x Cd1−x O thin films obtained by spray pyrolysis. Sol Energy Mater Sol Cells 73:249–25910.1016/S0927-0248(01)00134-9 ↗
11. Sun CW, Xin P, Ma CY, Liu ZW, Zhang QY, Wang YQ, Yin ZJ, Huang S, Chen T (2006) Optical and electrical properties of Zn1−x Cd x O films grown on Si substrates by reactive radio-frequency magnetron sputtering. Appl Phys Lett 89:18192310.1063/1.2378527 ↗
12. Ishihara J, Nakamura A, Shigemori A, Aoki T, Temmyo J (2005) Growth and characterization of Zn1−x Cd x O films using remote plasma MOCVD. Appl Surf Sci 244:381–38410.1016/j.apsusc.2004.10.094 ↗
13. Verma S, Pandey SK, Gupta M, Mukherjee S (2014) Effect of growth temperature in properties on CdZnO thin films. Physics of semiconductor devices: environmental science and engineering. Springer, Berlin, pp 865–86710.1007/978-3-319-03002-9_222 ↗
14. Pandey SK, Pandey SK, Verma S, Gupta M, Sathe V, Mukherjee S (2013) Investigation of dual ion beam sputtered transparent conductive Ga-doped ZnO films. J Mater Sci 24:4919–4924. doi: 10.1007/s10854-013-1498-2
15. Pandey SK, Pandey SK, Awasthi V, Gupta M, Deshpande UP, Mukherjee S (2013) Influence of in situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films. Appl Phys Lett 103:07210910.1063/1.4818819 ↗
16. Pandey SK, Pandey SK, Awasthi V, Kumar A, Deshpande UP, Gupta M, Mukherjee S (2013) p-Type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient. J Appl Phys 114:16310710.1063/1.4827379 ↗
17. Dual Ion-Beam Sputtering System V1108 Manual (2007) Version 3, pp 3–11
18. Khranovskyy V, Tsiaoussis I, Hultman L, Yakimova R (2011) Selective homoepitaxial growth and luminescent properties of ZnO nanopillars. Nanotechnology 22:18560310.1088/0957-4484/22/18/185603 ↗
19. Ma DW, Ye ZZ, Lu HM, Huang JY, Zhao BH, Zhu LP, Zhang HJ, He PM (2004) Sputtering deposited ternary Zn1−x Cd x O crystal films on Si(111) substrates. Thin Solid Films 461:205–255
20. Albertsson J, Abrahama SC, Kvick A (1989) Atomic displacement, anharmonic thermal vibration, expansivity and pyroelectric coefficient thermal dependences in ZnO. Acta Crystallogr B 45:34–4010.1107/S0108768188010109 ↗
21. Park SH, Hanada T, Oh DC et al (2007) Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy. Appl Phys Lett 91:231
22. Cebulla R, Wendt R, Ellmer K (1998) Al-doped zinc oxide films deposited by simultaneous Rf and DC excitation of a magnetron plasma: relationships between plasma parameters and structural and electrical film properties. J Appl Phys 83:1087–109510.1063/1.366798 ↗
23. Wang C, Xu D, Xiao X, Zhang Y, Zhang D (2007) Effects of oxygen pressure on the structure and photoluminescence of ZnO thin films. J Mater Sci 42:9795–9800. doi: 10.1007/s10853-007-1992-010.1007/s10853-007-1992-0 ↗
24. Cullity BD (1978) Elements of X-ray diffraction, 2nd edn. Addison-Wesley, Reading
25. Wang XS, Wu ZC, Webb JF, Liu ZG (2003) Ferroelectric and dielectric properties of Li-doped ZnO thin films prepared by pulsed laser deposition. Appl Phys A 77:561–56510.1007/s00339-002-1497-2 ↗
26. Ohtomo A, Kawasaki M, Ohkubo I, Koinuma H, Yasuda T, Segawa Y (1999) Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices. Appl Phys Lett 75:980–98210.1063/1.124573 ↗
27. Wang FZ, Ye ZZ, Ma DW, Zhu LP, Zhuge PF, He HP (2005) Synthesis and characterization of quasi-aligned ZnCdO nanorods. Appl Phys Lett 87:14310110.1063/1.2076434 ↗
28. Jeong SH, Kim BS, Lee BT (2003) Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient. Appl Phys Lett 82:2625–262710.1063/1.1568543 ↗
29. Studentikin SA, Golego N, Concivera MJ (1998) Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis. J Appl Phys 84:2287–229410.1063/1.368295 ↗
30. Asbrink S, Waskowska A, Gerward L, Olsen JS, Talik E (1996) High-pressure transition and properties of spinel ZnMn2O4. Phys Rev B 60:12651–1265610.1103/PhysRevB.60.12651 ↗
31. Djurisic AB, Leung YH, Tam KH, Hsu YF, Ding L, Ge W (2007) Defect emissions in ZnO nanostructures. Nanotechnology 18:09570210.1088/0957-4484/18/9/095702 ↗
32. Willander M, Nur O, Sadaf JR, Qadir ML, Zaman S, Zainelabdin A, Bano N, Hussain I (2010) Luminescence from zinc oxide nanostructures and polymers and their hybrid devices. Materials 3:2643–266710.3390/ma3042643 ↗
33. Yuan G, Zhu L, Ye Z, Qing Q, Zhao B, Fan R (2005) Effect of substrate temperature on structural, electrical and optical properties of Al–N co-doped ZnO thin films. Thin Solid Films 484:420–42510.1016/j.tsf.2005.03.003 ↗
34. Sathish DV, Kishna CR, Reddy CV, Thampy USU, Ravikumar RVSSN (2012) Structural and optical investigations on ZnCdO nanopowder. Phys Scr 86:03570810.1088/0031-8949/86/03/035708 ↗
35. Wang F, He H, Ye ZZ, Zhu L, Tang H, Zhang Y (2005) Raman scattering and photoluminescence of quasi-aligned ternary ZnCdO nanorods. J Phys D 38:2919–292210.1088/0022-3727/38/16/026 ↗
36. Zhang J, Cong L, Wan H, Wang T (2009) Green-emission and n-type conductivity of ZnO:Zn films obtained using vapor deposition method. Appl Surf Sci 255:3530–353310.1016/j.apsusc.2008.09.091 ↗
37. Borseth TM, Svensson BG, Kuznetsov AY, Klason P, Zhao QX, Willander M (2006) Identification of oxygen and zinc vacancy optical signals in ZnO. Appl Phys Lett 89:26211210.1063/1.2424641 ↗
38. Shtepliuk I, Khranovskyy V, Lashkarev G et al (2013) Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method. Appl Surf Sci 276:550–55710.1016/j.apsusc.2013.03.132 ↗
39. Yang WF, Liu B, Chen R, Wong LM, Wang SJ, Sun HD (2010) Pulsed laser deposition of high-quality ZnCdO epilayers and ZnCdO/ZnO single quantum well on sapphire substrate. Appl Phys Lett 97:06191110.1063/1.3478006 ↗
40. Cao HT, Pei ZL, Gong J, Sun C, Huang RF, Wen LS (2004) Preparation and characterization of Al and Mn doped ZnO (ZnO:(Al, Mn)) transparent conducting oxide films. J Solid State Chem 177:1480–148710.1016/j.jssc.2003.11.030 ↗
41. Gabas M, Gota S, Ramos-Barrado JR, Sanchez M, Barett NT, Avila J, Sacchi M (2005) Unravelling the conduction mechanism of Al-doped ZnO films by valence band soft X-ray photoemission spectroscopy. Appl Phys Lett 86:04210410.1063/1.1856141 ↗
42. Li QH, Gao T, Wang YG, Wang TH (2005) Adsorption and desorption of oxygen probed from ZnO nanowire films by photocurrent measurements. Appl Phys Lett 86:12311710.1063/1.1883711 ↗
43. George PJ, Sanchez-Juarez A, Nair PK (1996) Modification of electrical, optical and crystalline properties of chemically deposited CdS films by thermal diffusion of indium and tin. Semicond Sci Technol 11:109010.1088/0268-1242/11/7/021 ↗