Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors
Source abstract
Abstract
In this paper, photodetector devices with a trilayer structure of p+-Si-substrate (p+-Si)/multielement metal-oxide thin film (MO)/indium tin oxide thin film (ITO) were built, and the associated possible mechanism was discussed. An equivalent circuit model for trilayer photodetectors based on the band structure and I–V characteristic was developed. The I–V characteristics and the equivalent circuit model of the photodetector based on the energy band structure were verified via HSPICE simulation and were investigated comprehensively. The accuracy of the simulation results was greater than 99%. This work paves the way for understanding the working mechanism as well as the potential application for optimizing device fabrication for multielement photodetectors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Funding
Ministry of Science and Technology, Taiwan
References (41)
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