Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer
Source abstract
Abstract
In this study, we developed a Mo metal thin film deposition process consisting of two steps: Mo 2 N thin film deposition using plasma-enhanced atomic layer deposition, followed by rapid thermal annealing. The mechanism underlying the reduction of Mo 2 N during the post-deposition annealing was investigated. Agglomeration during the reduction of Mo 2 N to Mo was successfully suppressed by using a hydrogen-permeable mechanical capping layer. Finally, a Mo thin film formation process with low resistance, even at a thickness of 5 nm, was achieved.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Metal and Thin Film Mechanics · Semiconductor materials and devices · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Advanced Materials Engineering for Information and Electronics, and Integrated Education Program for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin, Gyeonggi 17104, Republic of Korea
R&D Team 1, UP Chemical Co., Ltd., Pyeongteak, Gyeonggi 17749, Republic of Korea
Funding
Korea Basic Science Institute · Korea Institute of Energy Technology Evaluation and Planning · Korea Evaluation Institute of Industrial Technology
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