Rectifying Effect in a High-Performance Ballistic Diode Bridge Based on Encapsulated Graphene with a Unique Design
Source abstract
Abstract
The long mean free path close to a micrometer in encapsulated graphene enabled us to rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier that resembles a diode bridge and is based on graphene encapsulated using hexagonal boron nitride. Our device’s asymmetric geometry combined with the exploitation of the ratcheting effect means that it can operate successfully and provides excellent performance. The device’s estimated responsivities at 38 000 V/W for holes and 23 000 V/W for electrons at room temperature are among the highest values for a ballistic device reported to date.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Radiation Effects in Electronics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Nanotechnology and Advanced Materials EngineeringSejong University, 209, Neungdong-ro, Gwangjin-guSeoul, 05006, Republic of Korea
HMC, Sejong University, Seoul, 05006, South Korea
Funding
Korea Institute of Energy Technology Evaluation and Planning · National Research Foundation
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