journal article·2018-06

Effect of annealing on microstructure and thermoelectric properties of hot-extruded Bi–Sb–Te bulk materials

Zhi-Lei Wang, Takehiro Araki, Tetsuhiko Onda, Zhong-Chun Chen

Journal of Materials Science· Volume 53· Issue 12
Publisher page

Abstract

The effect of annealing on the microstructure, thermoelectric properties and hardness of the hot-extruded Bi–Sb–Te materials has been investigated systematically to optimize their thermoelectric and mechanical properties. The mechanically alloyed powder was consolidated by hot extrusion at either 340 or 400 °C, followed by annealing in a temperature range of 260–400 °C. The microstructure of the annealed samples contained submicron grains with preferred (001) texture. As annealing temperature increased, the small-angle grain boundaries (SAGBs) increased because the increased amount of Te-rich and Sb-rich phases inhibits the movements of dislocations and SAGBs. The submicron microstructure led to a low thermal conductivity, for example, ~ 0.9 W/mK after annealing at TA ≥ 380 °C. The Seebeck coefficient highly depended on carrier mobility in addition to carrier concentration. For the extruded samples prepared at a lower extrusion temperature of 340 °C, the mobility increased significantly after annealing, resulting in great enhancements in the Seebeck coefficient and electrical conductivity. A peak ZT value of 0.94 and high hardness were simultaneously obtained under the conditions of hot extrusion at 340 °C and annealing at 380 °C. It seems that the combination of low-temperature extrusion and high-temperature annealing is an effective route to prepare high-performance Bi2Te3-based materials.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Thermal Radiation and Cooling Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (48)

Show source-provided references
1. Disalvo FJ (1999) Thermoelectric cooling and power generation. Science 285:703–70610.1126/science.285.5428.703 ↗
2. Sales BC (2002) Smaller is cooler. Science 295:1248–124910.1126/science.1069895 ↗
3. Biswas K, He J, Blum ID, Wu CI, Hogan TP, Seidman DN, Dravid VP, Kanatzidiset MG (2012) High-performance bulk thermoelectrics with all-scale hierarchical architectures. Nature 489:414–41810.1038/nature11439 ↗
4. Bachmann M, Czerner M, Heiliger C (2012) Ineffectiveness of energy filtering at grain boundaries for thermoelectric materials. Phys Rev B 86:11532010.1103/PhysRevB.86.115320 ↗
5. Amatya R, Ram RJ (2012) Trend for thermoelectric materials and their earth abundance. J Electron Mater 41:1011–101910.1007/s11664-011-1839-y ↗
6. Minnich AJ, Dresselhaus MS, Ren ZF, Chen G (2009) Bulk nanostructured thermoelectric materials: current research and future prospects. Energy Environ Sci 2:466–47910.1039/b822664b ↗
7. Snyder GJ, Toberer ES (2008) Complex thermoelectric materials. Nat Mater 7:105–11410.1038/nmat2090 ↗
8. Im JT, Hartwig KT, Sharp J (2004) Microstructural refinement of cast p-type Bi2Te3–Sb2Te3 by equal channel angular extrusion. Acta Mater 52:49–5510.1016/j.actamat.2003.08.025 ↗
9. Weise JR, Muller L (1960) Lattice constants of Bi2Te3–Bi2Se3 solid solution alloys. J Phys Chem Solids 15:1310.1016/0022-3697(60)90094-9 ↗
10. Schulz LG (1949) A direct method of determining preferred orientation of a flat reflection sample using a geiger counter X-ray spectrometer. J Appl Phys 20:1030–103310.1063/1.1698268 ↗
11. Taylor PJ, Maddux JR, Jesser WA, Rosi FD (1999) Room-temperature anisotropic, thermoelectric, and electrical properties of n-type (Bi2Te3)90(Sb2Te3)5(Sb2Se3)5 and compensated p-type (Sb2Te3)72(Bi2Te3)25(Sb2Se3)3 semiconductor alloys. J Appl Phys 85:7807–781310.1063/1.370589 ↗
12. Yim WM, Rosi FD (1972) Compound tellurides and their alloys for peltier cooling—a review. Solid State Electron 15:112110.1016/0038-1101(72)90172-4 ↗
13. Yang JY, Aizawa T, Yamamoto A, Ohtab T (2000) Thermoelectric properties of n-type (Bi2Se3)x(Bi2Te3)1−x prepared by bulk mechanical alloying and hot pressing. J Alloys Compd 312:326–33010.1016/S0925-8388(00)01159-2 ↗
14. Boulanger C (2010) Thermoelectric material electroplating: a historical review. J Electron Mater 39:1818–182710.1007/s11664-010-1079-6 ↗
15. Jiang J, Chen LD, Bai SQ, Yao Q (2005) Thermoelectric performance of p-type Bi–Sb–Te materials prepared by spark plasma sintering. J Alloys Compd 390:208–21110.1016/j.jallcom.2004.07.056 ↗
16. Soni A, Shen Y, Yin M, Zhao Y, Yu L, Hu X, Dong ZL, Khor KA, Dresselhaus MS, Xiong QH (2012) Interface driven energy filtering of thermoelectric power in spark plasma sintered Bi2Te2.7Se0.3 nanoplatelet composites. Nano Lett 12:4305–431010.1021/nl302017w ↗
17. Chen ZC, Suzuki K, Miura S, Nishimura K, Ikeda K (2009) Microstructural features and deformation-induced lattice defects in hot-extruded Bi2Te3 thermoelectric compound. Mater Sci Eng A 500:70–7810.1016/j.msea.2008.09.030 ↗
18. Kim SS, Yamamoto S, Aizawa T (2004) Thermoelectric properties of anisotropy-controlled p-type Bi-Te-Sb system via bulk mechanical alloying and shear extrusion. J Alloys Compd 375:107–11310.1016/j.jallcom.2003.11.141 ↗
19. Poudel B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang DZ, Muto A, Vashaee D, Chen XY, Liu JM, Dresselhaus MS, Chen G, Ren ZF (2008) High-thermoelectric performance of nanostructured bismuth antimony telluride bulk alloys. Science 320:634–63810.1126/science.1156446 ↗
20. Wang ZL, Akao T, Onda T, Chen ZC (2016) Microstructure and thermoelectric properties of hot-extruded Bi–Te–Se bulk materials. J Alloys Compd 663:134–13910.1016/j.jallcom.2015.12.122 ↗
21. Wang ZL, Araki T, Onda T, Chen ZC (2017) Microstructure and its influence on thermoelectric properties of hot-extruded Bi–Sb–Te bulk materials. Scripta Mater 141:89–9310.1016/j.scriptamat.2017.07.032 ↗
22. Navrátil J, Starý Z, Plecháček T (1996) Thermoelectric properties of p-type antimony bismuth telluride alloys prepared by cold pressing. Mater Res Bull 31:1559–156610.1016/S0025-5408(96)00149-3 ↗
23. Zhao LD, Zhang BP, Liu WS, Zhang HL, Li JF (2009) Effects of annealing on electrical properties of n-type Bi2Te3 fabricated by mechanical alloying and spark plasma sintering. J Alloys Compd 467:91–9710.1016/j.jallcom.2007.12.063 ↗
24. Lee DH, Lee JU, Jung SJ, Baek SH, Kim JH, Kim DI, Hyun DB, Kim JS (2014) Effect of heat treatment on the thermoelectric properties of Bismuth–Antimony–Telluride prepared by mechanical deformation and mechanical alloying. J Electron Mater 43:2255–226110.1007/s11664-014-3037-1 ↗
25. Kim DH, Lee GH (2006) Effect of rapid thermal annealing on thermoelectric properties of bismuth telluride films grown by co-sputtering. Mater Sci Eng B 131:106–11010.1016/j.mseb.2006.03.034 ↗
26. Wang X, He H, Wang N, Miao L (2013) Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering. Appl Surf Sci 276:539–54210.1016/j.apsusc.2013.03.130 ↗
27. Huang H, Luan W, Tu S (2009) Influence of annealing on thermoelectric properties of bismuth telluride films grown via radio frequency magnetron sputtering. Thin Solid Films 517:3731–373410.1016/j.tsf.2009.01.015 ↗
28. Zhao Y, Dyck JS, Hernandez BM, Burda C (2010) Improving thermoelectric properties of chemically synthesized Bi2Te3-based nanocrystals by annealing. J Phys Chem C 114:11607–1161310.1021/jp102816x ↗
29. Cai ZK, Fan P, Zheng ZH, Liu PJ, Chen TB, Cai XM, Luo JT, Liang GX, Zhang DP (2013) Thermoelectric properties and micro-structure characteristics of annealed N-type bismuth telluride thin film. Appl Surf Sci 280:225–22810.1016/j.apsusc.2013.04.138 ↗
30. Suga Y (1966) Thermoelectric semiconductor. Makisyoten, Tokyo
31. Liu WS, Zhang Q, Lan Y, Chen S, Yan X, Zhang Q, Wang H, Wang DZ, Chen G, Ren ZF (2011) Thermoelectric property studies on Cu-doped n-type CuxBi2Te2.7Se0.3 nanocomposites. Adv Energy Mater 1:577–58710.1002/aenm.201100149 ↗
32. Hamachiyo T, Ashida M, Hasezaki K (2009) Thermal conductivity of Bi0.5Sb1.5Te3 affected by grain size and pores. J Electron Mater 38:1048–105110.1007/s11664-009-0718-2 ↗
33. Brown A, Lewis B (1962) The systems bismuth-tellurium and antimony-tellurium and the synthesis of the minerals hedleyite and wehrlite. J Phys Chem Solids 23:1597–160410.1016/0022-3697(62)90242-1 ↗
34. Wang ZL, Akao T, Onda T, Chen ZC (2016) Formation of Te-rich phase and its effect on microstructure and thermoelectric properties of hot-extruded Bi–Te–Se bulk materials. J Alloys Compd 684:516–52310.1016/j.jallcom.2016.05.232 ↗
35. Lotgering FK (1959) Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—I. J Inorg Chem 9:113–123
36. Ge ZH, Ji YH, Qiu Y, Chong XY, Feng J, He J (2018) Enhanced thermoelectric properties of bismuth telluride bulk achieved by telluride-spilling during the spark plasma sintering process. Scripta Mater 143:90–9310.1016/j.scriptamat.2017.09.020 ↗
37. Tayon W, Crooks R, Domack M, Wagner J, Elmustafa AA (2010) EBSD study of delamination fracture in Al–Li Alloy 2090. Exp Mech 50:135–14310.1007/s11340-008-9202-9 ↗
38. Hu L, Zhu T, Liu X, Zhao X (2014) Point defect engineering of high-performance bismuth-telluride-based thermoelectric materials. Adv Funct Mater 24:5211–521810.1002/adfm.201400474 ↗
39. Pan Y, Wei TR, Wu CF, Li JF (2015) Electrical and thermal transport properties of spark plasma sintered n-type Bi2Te3–xSex alloys: the combined effect of point defect and Se content. J Mater Chem C 3:10583–1058910.1039/C5TC02219C ↗
40. Rai-Choudhury P, Hower PL (1973) Growth and characterization of polycrystalline silicon. J Electrochem Soc 120:1761–176610.1149/1.2403359 ↗
41. Kamins TI (1971) Hall mobility in chemically deposited polycrystalline silicon. J Appl Phys 42:4357–436510.1063/1.1659780 ↗
42. Seto JYW (1975) The electrical properties of polycrystalline silicon films. J Appl Phys 46:5247–525410.1063/1.321593 ↗
43. Liu XD, Park YH (2003) Structure and transport properties of (Bi1-xSbx)2Te3 thermoelectric materials prepared by mechanical alloying and pulse discharge sintering. Mater Trans 43:681–687
44. Barnard RD (1972) Thermoelectricity in metals and alloys. Taylor and Francis, London
45. Zhang Q, Zhang QY, Chen S, Liu WS, Lukas K, Yan X, Wang HZ, Wang DZ, Opeila C, Chen G, Ren ZF (2012) Suppression of grain growth by additive in nanostructured p-type bismuth antimony tellurides. Nano Energy 1:183–18910.1016/j.nanoen.2011.10.006 ↗
46. Ma Y, Hao Q, Poudel B, Lan YC, Yu B, Wang DZ, Chen G, Ren ZF (2008) Enhanced thermoelectric figure-of-merit in p-type nanostructured bismuth antimony tellurium alloys made from elemental chunks. Nano Lett 8:2580–258410.1021/nl8009928 ↗
47. Kim HS, Gibbs ZM, Tang Y, Wang H, Snyder GJ (2015) Characterization of Lorenz number with Seebeck coefficient measurement. APL Mater 3:04150610.1063/1.4908244 ↗
48. Xu ZJ, Hu LP, Ying PJ, Zhao XB, Zhu TJ (2015) Enhanced thermoelectric and mechanical properties of zone melted p-type (Bi, Sb)2Te3 thermoelectric materials by hot deformation. Acta Mater 84:385–39210.1016/j.actamat.2014.10.062 ↗