Effect of Al doping and deposition runs on structural and optical properties of In2S3 thin films grown by CBD
Source abstract
Abstract
β-In2−x Al x S3 thin films have been grown on glass substrate by chemical bath deposition for different value of Al concentration y = (([Al])/([In]))sol (0 ≤ y ≤ 5 at.%). Samples have been characterized using X-ray diffraction, atomic force microscopy and by spectrophotometric measurements. The influence of the increase of y ratio in the structural and optical properties are described and discussed in terms of crystallinity improvement. In order to increase film thickness of β-In2−x Al x S3, we have been realized multi-deposition system. The structural, the surface morphology as well as the optical properties seem to be improved as the film thickness is of about 1200 nm.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
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