journal article·2022-08-23

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Zidong Cai, Xuelin Yang, Cheng Ma, Zhenghao Chen, Danshuo Liu, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

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Abstract

An ultralow-supersaturation Al pretreatment approach has been proposed to achieve low threading dislocation (TD) density and low radio frequency (RF) loss GaN/AlN layer stacks on Si substrates. By employing this approach, the Al–Si liquid alloy is eliminated, and a sharp AlN/Si interface is obtained. In addition, the size of the AlN nucleation islands is enlarged and thus the TDs generated from the coalescence of the islands are reduced even at a low growth temperature. Owing to the low TD density AlN layer, a 1.5 μm crack-free GaN layer can be achieved directly on this AlN layer and no transition layers are required. The full width at half maximum values are as low as 390 and 440 arcsec for the GaN (002) and (102) diffractions, respectively. Owing to a low growth temperature and short growth time, the RF loss of the epi-stack is as low as 0.29 dB/mm at 10 GHz. This work shows great potential for the fabrication of high-quality and low-loss GaN-on-Si RF devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, China

Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China

International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Funding

Ministry of Science and Technology of the People's Republic of China · Beijing Municipal Science and Technology Commission · National Natural Science Foundation of China · Guangdong Province

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