Micron-Thick Hexagonal Boron Nitride Crystalline Film for Vacuum Ultraviolet Photodetection with Improved Sensitivity and Spectral Response
Source abstract
Abstract
Hexagonal boron nitride crystalline film with a thickness of 70 μm is deposited on a c-plane sapphire at 1700 °C by the chemical vapor deposition (CVD) method. In X-ray diffraction (XRD) characterizations, a peak of (002) is observed at 26.01° with the full width at half-maximum (FWHM) of 1.17°, and the c-axis lattice constant is estimated to be 6.84 Å. The characterization results of Raman and X-ray photoelectron spectroscopy further confirm the film’s high quality. Based on the h-BN film, a vacuum ultraviolet (VUV) photodetector is further fabricated with a responsivity of 48.7 μA/W, exhibiting a photo-to-dark current ratio (PDCR) of more than 103 as well as an excellent spectral selectivity to short-wave ultraviolet irradiation. By analyzing the photoresponse process, the influence of different response mechanisms is explained, implying the photodetector’s ability to respond quickly.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
Funding
National Natural Science Foundation of China
References (45)
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