journal article·2021-05-25

Monolithic Integration of Strained UV–Visible Dual Color Photodetectors on 4 in. Multilayer MoS2-on-Freestanding GaN Wafer by Direct van der Waals Growth

Xinke Liu, Jiangliu Luo, DeLiang Zhu, You Ming Lu, Xiaohua Li, Jinlan He, Hsien-Chin Chiu, Ke Xu, Wenjie Yu, Ren-Jei Chung

Publisher page

Abstract

MoS2/GaN van der Waals heterojunction is suitable for the multiband photodetection field due to the nearly lattice match and excellent response capabilities in ultraviolet and visible light regions. In this work, a multilayer MoS2/GaN van der Waals heterojunction was grown by the chemical vapor deposition method and fabricated into an integrated ultraviolet–visible photodetector. Tensile strain was introduced on MoS2/GaN by depositing Al2O3 stress liner using atomic layer deposition. Owing to the tensile strain effect, excellent detection performances were demonstrated, including a responsivity as high as 1.4 × 105 A/W, a noise equivalent power of 5.63 × 10–21 W/Hz1/2, a normalized detectivity of 6.13 × 1021 jones for stress liner GaN photodetector under 280 nm illumination, and 453.3 A/W for stress liner MoS2 photodetector under 460 nm illumination. The shortened response time of the photodetector is attributed to the improved carrier mobility and the separation of MoS2 from air by Al2O3. This work has provided significant guidance for the development of integrated circuits and optical chips.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · GaN-based semiconductor devices and materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advance Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China

Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore

Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan

Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, People’s Republic of China

Department of Chemical Engineering and Biotechnology, National Taipei University of Technology (Taipei Tech), Taipei 10608, Taiwan

Funding

National Taipei University of Technology · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Shenzhen University · State Key Laboratory of Functional Materials for Informatic · Science and Technology Foundation of Shenzhen · Guangdong Province

References (45)

Show source-provided references
1. 10.1126/science.110289610.1126/science.1102896 ↗
2. 10.1038/nature0423310.1038/nature04233 ↗
3. 10.1038/nature0423510.1038/nature04235 ↗
4. 10.1002/adfm.20170523710.1002/adfm.201705237 ↗
5. 10.1088/2053-1583/aa87c110.1088/2053-1583/aa87c1 ↗
6. 10.1002/adma.20190235210.1002/adma.201902352 ↗
7. 10.1039/C8NR09368G10.1039/C8NR09368G ↗
8. 10.1002/adma.20170694510.1002/adma.201706945 ↗
9. 10.1016/j.physrep.2019.12.00610.1016/j.physrep.2019.12.006 ↗
10. 10.1038/nnano.2008.26810.1038/nnano.2008.268 ↗
11. 10.1016/j.jallcom.2017.11.05810.1016/j.jallcom.2017.11.058 ↗
12. 10.1103/PhysRevLett.84.95110.1103/PhysRevLett.84.951 ↗
13. 10.1002/adom.20180046110.1002/adom.201800461 ↗
14. 10.1515/nanoph-2019-051510.1515/nanoph-2019-0515 ↗
15. 10.1002/adma.20130124410.1002/adma.201301244 ↗
16. 10.1002/adma.20150334010.1002/adma.201503340 ↗
17. 10.1088/1361-6528/aa747310.1088/1361-6528/aa7473 ↗
18. 10.1016/j.sna.2017.11.05010.1016/j.sna.2017.11.050 ↗
19. 10.1063/1.509303910.1063/1.5093039 ↗
20. 10.1063/1.499828410.1063/1.4998284 ↗
21. 10.1016/j.spmi.2018.05.04910.1016/j.spmi.2018.05.049 ↗
22. 10.1002/adma.20170388810.1002/adma.201703888 ↗
23. 10.1364/PRJ.7.00031110.1364/PRJ.7.000311 ↗
24. 10.1364/PRJ.7.00112710.1364/PRJ.7.001127 ↗
25. 10.1063/1.509545110.1063/1.5095451 ↗
26. 10.1016/j.nantod.2018.07.00110.1016/j.nantod.2018.07.001 ↗
27. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
28. 10.1088/0953-8984/27/31/31320110.1088/0953-8984/27/31/313201 ↗
29. 10.1021/acs.chemrev.7b0063310.1021/acs.chemrev.7b00633 ↗
30. 10.1021/acs.nanolett.6b0023810.1021/acs.nanolett.6b00238 ↗
31. 10.1002/adma.20160285410.1002/adma.201602854 ↗
32. 10.1021/acs.nanolett.5b0168910.1021/acs.nanolett.5b01689 ↗
33. 10.1016/j.apsusc.2017.09.20310.1016/j.apsusc.2017.09.203 ↗
34. 10.1116/1.128781910.1116/1.1287819 ↗
35. 10.1021/acsnano.5b0800810.1021/acsnano.5b08008 ↗
36. 10.1103/PhysRevB.93.14040910.1103/PhysRevB.93.140409 ↗
37. 10.1038/srep0660810.1038/srep06608 ↗
38. 10.1063/1.505379510.1063/1.5053795 ↗
39. 10.1021/nn404775u10.1021/nn404775u ↗
40. 10.1002/adma.20150222210.1002/adma.201502222 ↗
41. 10.1021/acsami.5b0909310.1021/acsami.5b09093 ↗
42. 10.1088/0953-8984/14/11/30110.1088/0953-8984/14/11/301 ↗
43. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
44. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
45. 10.1103/PhysRevB.16.174610.1103/PhysRevB.16.1746 ↗