Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates
Source abstract
Abstract
Heteroepitaxial growth of semipolar laser diodes (LDs) on foreign substrates is extremely challenging but crucial to reduce the cost of semipolar bulk GaN substrates. In this work, we demonstrate the first efficient semipolar 410 nm violet LDs grown on high-quality low-cost semipolar GaN/sapphire substrates. The fabricated semipolar LD exhibits a high output power of more than 900 mW at 1.6 A and a wall-plug efficiency of 5.6% under pulsed operation. The analysis also quantitatively confirms that the high density of defects and high nonradiative recombination rate in the active region account for the high transparency current observed in the devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Spectroscopy and Laser Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Department, University of California, Santa Barbara, California 93106, United States
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, United States
Funding
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara · University of California, Santa Barbara · Collaborative Research in Engineering, Science and Technology Centre
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