Influence of substrate and selenization temperatures on the growth of Cu2SnSe3 films
Source abstract
Abstract
The effects of substrate temperature and selenization temperature on the structure, composition, electrical and optical properties of Cu2SnSe3 films were studied systematically. Cu2SnSe3 films deposited at various substrate temperatures (303–573 K) by the flash evaporation method are found to be non-stoichiometric. To compensate the selenium deficiency and obtain a single-phase, an annealing Cu2SnSe3 films deposited at 573 K was performed in selenium atmosphere. Cu2SnSe3 films deposited at a substrate temperature of 573 K and then selenized at 673 K were single phase and polycrystalline exhibiting monoclinic structure. The films showed p-type conductivity with a direct band gap of 0.84 eV.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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