journal article·2020-07-28Open access

Epitaxial Formation of SiC on (100) Diamond

Alexander Tsai, Alireza Aghajamali, Nikolai Dontschuk, Brett C. Johnson, Muhammad Usman, Alex K. Schenk, Michael Sear, Christopher I. Pakes, Lloyd C. L. Hollenberg, Jeffrey C. McCallum, Sergey Rubanov, Anton Tadich, Nigel A. Marks, Alastair Stacey

Abstract

We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice mismatch that exceeds 20%. High-resolution transmission electron microscopy confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realizing heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high-power electronics. At a fundamental level, the study redefines our understanding of SiC and diamond heteroepitaxy and furthers our understanding of large lattice mismatched interfaces.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Diamond and Carbon-based Materials Research · Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics, University of Melbourne, Parkville, VIC 3010, Australia

Department of Physics and Astronomy, Curtin University, Perth, Western Australia 6102, Australia

Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, VIC 3010, Australia

School of Computing and Information Systems, Melbourne School of Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia

Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Bundoora, Victoria 3086, Australia

Bio21 Institute, University of Melbourne, Parkville, VIC 3010, Australia

Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia

School of Science, RMIT University, Melbourne, VIC 3001, Australia

Funding

Australian Research Council

References (48)

Show source-provided references
1. 10.1126/science.107437410.1126/science.1074374 ↗
2. 10.1016/S1369-7021(07)70349-810.1016/S1369-7021(07)70349-8 ↗
3. 10.1007/s10854-005-5137-410.1007/s10854-005-5137-4 ↗
4. 10.1109/5.9012810.1109/5.90128 ↗
5. 10.1016/S0925-9635(00)00399-X10.1016/S0925-9635(00)00399-X ↗
6. 10.1109/STHERM.2003.119438610.1109/STHERM.2003.1194386 ↗
7. 10.1109/16.53681910.1109/16.536819 ↗
8. 10.1103/PhysRevLett.77.404610.1103/PhysRevLett.77.4046 ↗
9. 10.1063/1.9620610.1063/1.96206 ↗
10. 10.1116/1.57236110.1116/1.572361 ↗
11. 10.1017/CBO978051175471510.1017/CBO9780511754715 ↗
12. 10.1038/srep0703710.1038/srep07037 ↗
13. 10.1063/1.474273610.1063/1.4742736 ↗
14. 10.1002/pssr.20110502410.1002/pssr.201105024 ↗
15. 10.1063/1.346345510.1063/1.3463455 ↗
16. 10.1063/1.11500510.1063/1.115005 ↗
17. 10.3367/UFNe.0185.201502b.014310.3367/UFNe.0185.201502b.0143 ↗
18. 10.1557/mrs.2014.9610.1557/mrs.2014.96 ↗
19. 10.1109/16.53680710.1109/16.536807 ↗
20. 10.1063/1.133764810.1063/1.1337648 ↗
21. Koizumi S. · 2018
22. 10.1016/S0925-9635(02)00401-610.1016/S0925-9635(02)00401-6 ↗
23. 10.1063/1.10654110.1063/1.106541 ↗
24. 10.1063/1.486872010.1063/1.4868720 ↗
25. 10.1016/j.diamond.2012.12.01210.1016/j.diamond.2012.12.012 ↗
26. 10.1063/1.345236210.1063/1.3452362 ↗
27. 10.1063/1.357453110.1063/1.3574531 ↗
28. 10.1049/el.2010.293710.1049/el.2010.2937 ↗
29. 10.7567/JJAP.51.01AG0910.7567/JJAP.51.01AG09 ↗
30. 10.4028/www.scientific.net/MSF.778-780.22610.4028/www.scientific.net/MSF.778-780.226 ↗
31. 10.1063/1.152830110.1063/1.1528301 ↗
32. 10.1063/1.492118110.1063/1.4921181 ↗
33. 10.1063/1.10756810.1063/1.107568 ↗
34. 10.1103/PhysRevB.68.19530210.1103/PhysRevB.68.195302 ↗
35. 10.1103/PhysRevLett.89.15610110.1103/PhysRevLett.89.156101 ↗
36. 10.1063/1.37156810.1063/1.371568 ↗
37. 10.1016/S0022-3093(03)00526-X10.1016/S0022-3093(03)00526-X ↗
38. 10.1016/j.jeurceramsoc.2016.11.04610.1016/j.jeurceramsoc.2016.11.046 ↗
39. 10.7567/APEX.10.04550210.7567/APEX.10.045502 ↗
40. Kruger A. · 201010.1002/9783527629602 ↗
41. Taylor, A.; Jones, R. M. In Silicon Carbide – A High Temperature Semiconductor; O’Connor, J. R., Smiltens, J., Eds. Pergamon Press, 1960; pp 147–156.
42. Jrrendahl K. · 1998 · 52 · 1
43. 10.1103/PhysRevB.39.556610.1103/PhysRevB.39.5566 ↗
44. 10.2172/1017642110.2172/10176421 ↗
45. 10.1103/PhysRevLett.56.63210.1103/PhysRevLett.56.632 ↗
46. 10.1103/PhysRevLett.61.287910.1103/PhysRevLett.61.2879 ↗
47. 10.1063/1.240842010.1063/1.2408420 ↗
48. 10.1088/0965-0393/18/1/01501210.1088/0965-0393/18/1/015012 ↗