journal article·2020-11-24

Luminescence Characteristics and Vibronic Coupling Behavior of a Highly Efficient Eu2+-Activated RbLi7Si2O8 Green Phosphor for Wide Color Gamut WLEDs

Fei Tang, Haoqi Li, Kangzhen Tian, Shijie Xu, Xiaojun Wang, Chenhui Xie, Honggang Ye, Yongge Cao

ACS Applied Electronic Materials· Volume 2· Issue 11
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Abstract

Hunting for a type of green phosphor with outstanding properties is of much significance for improving the performance of display backlights. In this work, a series of efficient Eu2+-activated RbLi7Si2O8 (denoted as RLSO:Eu2+) green phosphors with different doping concentrations were prepared via a low-temperature solid-state reaction approach under a reduced atmosphere. Photoluminescence (PL) measurements show that the prepared green phosphor with 8 atom % doping concentration of Eu exhibits the best internal quantum yield (IQY) of 95.8%. Besides, the phosphor delivers a good anti-thermal quenching behavior at temperatures <200 K, that is, there is no significant drop in luminescence intensity. Such thermal behavior is well consistent with the temperature dependence of measured luminescence lifetimes. The spectral analysis of the low-temperature luminescence spectrum with a semiclassical time-dependent approach reveals that three electronic levels of the Eu2+ ion coupled with a common low-frequency vibrational phonon mode with an energy of 21 meV shall be responsible for the high-efficiency luminescence of the prepared phosphor. Using the as-prepared green phosphor and K2SiF6:Mn4+ red phosphor, a white light-emitting diode (LED) device with high luminous efficacy (111.08 lm/W) and wide color gamut (112% NTSC) is fabricated on an InGaN blue chip.
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Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Perovskite Materials and Applications · Luminescence and Fluorescent Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China

Department of Applied Physics, Xi’an Jiaotong University, Xi’an 710049, China

Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China

Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan 523808, China

Funding

Natural Science Foundation of Jiangsu Province · Jiangsu Normal University · National Natural Science Foundation of China · Shenzhen Municipal Science and Technology Innovation Council

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