journal article·2020-03-24

Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices

Yiqi Yu, Bingyuan Zhao, Jonathan M. Goodwill, Yuanzhi Ma, James A. Bain, Marek Skowronski

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Abstract

We present experimental results of relaxation oscillations based on the TaOx threshold switching devices as a function of voltage, load resistance, and the parallel capacitance. Of particular interest are the dynamics of transitions between ON and OFF states of the device which impose an upper limit of the oscillation frequency. The dynamics have been captured by the finite element electrothermal model using only electrical conductivity vs temperature and thermally activated conductivities as input data. The model reproduced current and voltage waveforms and allowed for following the changes in current density and temperature distributions within the device during oscillations. Both undergo significant breathing-mode-type changes in each cycle as the current spontaneously constricts during the capacitance discharge/heating stage. The model points out the possible approaches toward achieving higher oscillation frequencies.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Transition Metal Oxide Nanomaterials

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Affiliations

Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

Funding

Division of Materials Research · Data Storage Systems Center, Carnegie Mellon University

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