Structural and optical characterization of Ni-doped CdS quantum dots
Source abstract
Abstract
Ni-doped CdS quantum dots have been prepared by chemical precipitation technique. The X-diffraction results indicated that the particle size of Ni-doped CdS nanoparticles is smaller than that of undoped CdS and no secondary phase was observed. The average grain size of the nanoparticles is found to lie in the range of 2.7–4 nm. The compositional analysis results show that Cd, Ni, and S are present in the samples. HRTEM studies reveal that the average particle size of undoped and Ni-doped CdS quantum dots is 2 and 3 nm, respectively. Raman spectra shows that 1LO, 2LO, and 3LO peaks of the Ni-doped CdS samples are slightly red shifted when compared to that of undoped CdS. The absorption edge of Ni-doped CdS nanoparticles is found to shift towards the higher-wavelength (red shift) side when compared to that of undoped CdS and the band gap is observed to lie in the range of 3.79–3.95 eV. This band gap is higher than that of the bulk CdS and is due to quantum confinement effect present in CdS nanoparticles.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. Navaneethan M, Nisha KD, Ponnusamy S, Muthamizhchelvan C (2009) Mater Chem Phys 117:44310.1016/j.matchemphys.2009.06.026 ↗
2. Unn C, Philip D, Gopchandran KG (2009) Optic Mater 32:16910.1016/j.optmat.2009.06.019 ↗
3. Andrade JJ, Brasil AG Jr, Farias PMA, Fontes A, Santos BS (2009) Microelectron J 40:64110.1016/j.mejo.2008.06.040 ↗
4. Thambidurai M, Murugan N, Muthukumarasamy N, Vasantha S, Balasundaraprabhu R, Agilan S (2009) Chalcogenide Lett 6:171
5. Gao Y, Zhang Q, Gao Q, Tian Y, Zhou W, Zheng L, Zhang S (2009) Mater Chem Phys 115:72410.1016/j.matchemphys.2009.02.020 ↗
6. Romeo N, Bosio A, Romeo A (2010) Sol Energy Mater Sol Cells 94:210.1016/j.solmat.2009.06.001 ↗
7. Bruchez M Jr, Moronne M, Gin P, Weiss S, Alivisatos AP (1998) Science 281:201310.1126/science.281.5385.2013 ↗
8. Agarwal R, Barrelet CJ, Lieber CM (2005) Nano Lett 5:91710.1021/nl050440u ↗
9. Gao T, Li QH, Wang TH (2005) Appl Phys Lett 86:17310510.1063/1.1915514 ↗
10. Lee W, Min SK, Dhas V, Ogale SB, Han SH (2009) Electrochem Commun 11:10310.1016/j.elecom.2008.10.042 ↗
11. Poole CP Jr, Owens FJ (2003) Introduction of nanotechnology. Wiley, New Jersey
12. Yadav RS, Mishra P, Mishra R, Kumar M, Pandey AC (2010) Ultrason Sonochem 17:11610.1016/j.ultsonch.2009.04.011 ↗
13. Reda SM (2008) Acta Mater 56:25910.1016/j.actamat.2007.09.017 ↗
14. Tong XL, Jiang DS, Hu WB, Liu ZM, Luo MZ (2006) Appl Phys A 84:14310.1007/s00339-006-3574-4 ↗
15. Pradhan B, Sharma AK, Ray AK (2007) J Cryst Growth 304:38810.1016/j.jcrysgro.2007.03.041 ↗
16. Raji P, Sanjeeviraja C, Ramachandran K (2005) Bull Mater Sci 28:23310.1007/BF02711253 ↗
17. Kalandaragh YA, Muradov MB, Mammedov RK, Kaodayari A (2007) J Cryst Growth 305:17510.1016/j.jcrysgro.2007.03.010 ↗
18. Patidar D, Sharma R, Jani N, Sharma TP, Saxena NS (2006) Bull Mater Sci 29:2110.1007/BF02709350 ↗
19. Luccio TD, Piscopiello E, Laera AM, Antisari MV (2007) Mater Sci Eng C 27:137210.1016/j.msec.2006.07.018 ↗
20. Lee J-H, Yi J-S, Yang K-J, Park J-H, Oh R-D (2003) Thin Solid Films 431–432:34410.1016/S0040-6090(03)00153-6 ↗
21. Zyoud AH, Zaatar N, Saadeddin I, Ali C, Park D, Campet G, Hilal HS (2010) J Hazard Mater 173:31810.1016/j.jhazmat.2009.08.093 ↗
22. Nag A, Sapra S, Sen Gupta S, Prakash A, Ghangrekar A, Periasamy N, Sarma DD (2008) Bull Mater Sci 31(3):56110.1007/s12034-008-0087-0 ↗
23. Badera N, Godbole B, Srivastava SB, Vishwakarma PN, Sharath Chandra LS, Jain D, Gangrade M, Shripathi T, Sathe VG, Ganesan V (2008) Appl Surface Sci 254:704210.1016/j.apsusc.2008.05.218 ↗
24. Ma J, Tai G, Guo W (2010) Ultrasonic Sonochem 17:53410.1016/j.ultsonch.2009.11.008 ↗
25. Soni H, Chawda M, Bodas D (2009) Mater Lett 63:76710.1016/j.matlet.2008.12.052 ↗
26. Phuruangrat A, Thongtem T, Thongtem S (2009) Mater Lett 63:153810.1016/j.matlet.2009.04.005 ↗
27. Thongtem T, Phuruangrat A, Thongtem S (2009) Ceram Int 35:281710.1016/j.ceramint.2009.03.024 ↗
28. Prabhu RR, khaddar MA (2008) Bull Mater Sci 31(3):51110.1007/s12034-008-0080-7 ↗
29. Maleki M, Ghamsari MS, Mirdamadi Sh, Ghasemzadeh R (2007) Semiconduct Phys Quantum Electron Optoelectron 10:3010.15407/spqeo10.01.030 ↗
30. Yao L, Xu G, Yang X, Luan Y (2009) Colloids Surface A 333:110.1016/j.colsurfa.2008.09.019 ↗
31. Kassim A, Zainal Z, Nagalingam S, Kuang D, Sharafaddin NH, Mai C (2004) Science 31(2):131
32. Gemma N (1984) J Phys C 17:233310.1088/0022-3719/17/13/016 ↗
33. Tsai CT, Chen SH, Chu DS (1996) Phys Rev B 54:1155510.1103/PhysRevB.54.11555 ↗
34. Cho WC, Kuo SS, Chen FR, Twardowski A, Tworzydlo J, Chen YF (1996) Phys Status Solidi B 193:12510.1002/pssb.2221930113 ↗
35. Khallaf H, Chai G, Lupan O, Chow L, Park S, Schulte A (2009) Appl Surface Sci 255:412910.1016/j.apsusc.2008.10.115 ↗
36. Jhonsi MA, Kathiravan A, Renganathan R (2009) J Mol Struct 921:27910.1016/j.molstruc.2009.01.006 ↗