journal article·2017-05

Effects of applied strain and electric field on small-molecule sensing by stanene monolayers

Tianxing Wang, Rumeng Zhao, Mingyu Zhao, Xu Zhao, Yipeng An, Xianqi Dai, Congxin Xia

Journal of Materials Science· Volume 52· Issue 9
Publisher page

Abstract

We focus on the electronic structures of small gas molecule (such as CO, H2O, NH3, NO, and NO2)-adsorbed stanene monolayers by first-principles method. The results show that H2O, NH3, and CO molecules are physisorbed on stanene monolayer, while NO and NO2 molecules are found to be chemisorbed on stanene with quite large charge transfer, sizable adsorption energy, and strong covalent (Sn–O) bonds. Moreover, our spin–orbit coupling calculations show that the band gaps of the molecule-adsorbed stanene monolayers can be tuned effectively. In particular, our results also show that when the biaxial strains and electric field are applied, the adsorption energies and charge transfer between gas molecules and stanene monolayers change dramatically, which indicates that external factors on stanene monolayers are highly preferred. These results indicate that stanene is promising for wide-ranging applications as superior gas sensors and electrical devices.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials

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References (44)

Show source-provided references
1. Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA (2004) Electric field effect in atomically thin carbon films. Science 306:666–66910.1126/science.1102896 ↗
2. Zhang S-L, Xie M-Q, Li F-Y, Yan Z, Li Y-F, Kan E-J, Liu W, Chen Z-F, Zeng H-B (2016) Semiconducting group 15 monolayers: a broad range of band gaps and high carrier mobilities. Angew Chem Int Ed 55:1666–166910.1002/anie.201507568 ↗
3. Zhang C-W, Yan S-S (2012) First-principles study of ferromagnetism in two-dimensional silicene with hydrogenation. J Phys Chem C 116:4163–416610.1021/jp2104177 ↗
4. Zheng F-B, Zhang C-W (2012) The electronic and magnetic properties of functionalized silicene: a first-principles study. Nanoscale Res Lett 7(422):1–5
5. Zhao M-Y, Zhao R-M, Li W, Ma Y-Q, Wang T-X, Dai X-Q (2017) Magnetic properties of the 2D Fen core Xm(X = C, N, O, Cl, S and F) shell clusters embedded in grapheme. Appl Surf Sci 392:277–28510.1016/j.apsusc.2016.09.056 ↗
6. Zhang R-W, Zhang C-W, Ji W-X, Hu S-J, Yan S-S, Li S-S, Li P, Wang P-J, Liu Y-S (2014) Silicane as an inert substrate of silicene: a promising candidate for FET. J Phys Chem C 118(43):25278–2528310.1021/jp508253x ↗
7. Tongay S, Zhou J, Ataca C, Lo K, Matthews TS, Li J, Grossman JC, Wu J (2012) Thermally driven crossover from indirect toward Direct bandgap in 2D semiconductors: MoSe2 versus MoS2. Nano Lett 12:5576–558010.1021/nl302584w ↗
8. Wang Q-H, Zadeh KK, Kis A, Coleman JN, Strano MS (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7:699–71210.1038/nnano.2012.193 ↗
9. Kang J, Tongay S, Zhou J, Li J-B, Wu J-Q (2013) Band offsets and heterostructures of two-dimensional semiconductors. Appl Phys Lett 102:01211110.1063/1.4774090 ↗
10. Keyshar K, Gong Y-J, Ye G-L, Brunetto G, Zhou W, Cole DP, Hackenberg K, He Y-M, Machado L, Kabbani M, Hart AHC, Bi L, Galvao DS, George A, Vajtai R, Tiwary CS, Ajayan PM (2015) Chemical vapor deposition of monolayer Rhenium Disulfide (ReS2). Adv Mater 27:4640–464810.1002/adma.201501795 ↗
11. Zhu F-F, Chen W-J, Xu Y, Gao -CL, Guan D-D, Liu C-H, Qian D, Zhang S-C, Jia J-F (2015) Epitaxial growth of two-dimensional stanene. Nat Mater 14:1020–102510.1038/nmat4384 ↗
12. Cai B, Zhang S-Q, Hu Z-Y, Hu Y-H, Zou Y-S, Zeng H-B (2015) Tinene: a two-dimensional Dirac material with a 72 meV band gap. Phys Chem Chem Phys 17:12634–1263810.1039/C5CP00563A ↗
13. Zhang R-W, Zhang C-W, Ji W-X, Li S-S, Hu S-J, Yan S-S, Li P, Wang P-J, Li F (2015) Ethynyl-functionalized stanene film: a promising candidate as large-gap quantum spin hall insulator. New J Phys 17:08303610.1088/1367-2630/17/8/083036 ↗
14. Mogulkoc A, Modarresi M, Kandemir BS, Roknabadi MR (2016) Magnetotransport properties of corrugated stanene in the presence of electric modulation and tilted magnetic field. Phys Status Solidi B 253:300–30710.1002/pssb.201552341 ↗
15. Matthes L, Pulci O, Bechstedt F (2013) Massive Dirac quasiparticles in the optical absorbance of graphene, silicene, germanene, and tinene. J Phys Condens Matter 25:39530510.1088/0953-8984/25/39/395305 ↗
16. Kou L-Z, Du A-J, Chen C-F, Frauenheim T (2014) Strain engineering of selective chemical adsorption on monolayer MoS2. Nanoscale 6:5156–516110.1039/C3NR06670C ↗
17. Luo X, Zhao Y-Y, Zhang J (2013) Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe2. Phys Rev B 88:19531310.1103/PhysRevB.88.195313 ↗
18. Cai Y-Q, Ke Q-Q, Zhang G, Zhang Y-W (2015) Energetics, charge transfer, and magnetism of small molecules physisorbed on phosphorene. J Phys Chem C 119:3102–311010.1021/jp510863p ↗
19. Chikkadi K, Muoth M, Roman C, Haluska M, Hierold C (2014) Advances in NO2 sensing with individual single-walled carbon nanotube transistors. Beilstein J Nanotechnol 5:2179–219110.3762/bjnano.5.227 ↗
20. Quhe R, Fei R, Liu Q, Zheng J, Li H, Xu C, Ni Z, Wang Y, Yu D, Gao Z, Lu J (2012) Tunable and sizable band gap in silicene by surface adsorption. Sci Rep 2(853):1–6
21. Wang T-X, Zhao R-M, Zhao X, An Y-P, Dai X-Q, Xia C-X (2016) Tunable donor and acceptor impurity states in a WSe2 monolayer by adsorption of common gas molecules. RSC Adv 6:82793–8280010.1039/C6RA17643G ↗
22. Zhang S-L, Yan Z, Li Y-F, Chen Z-F, Zeng H-B (2015) Atomically thin arsenene and antimonene: semimetal–semiconductor and indirect–direct band-gap transitions. Angew Chem Int Ed 54:3112–311510.1002/anie.201411246 ↗
23. Zhang S-L, Xie M-Q, Cai B, Zhang H-J, Ma Y-D, Chen Z-F, Zhu Z, Hu Z-Y, Zeng H-B (2016) Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain. Phys Rev B. 93:24530310.1103/PhysRevB.93.245303 ↗
24. Kresse G, Furthmuller J (1996) Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B 54:1116910.1103/PhysRevB.54.11169 ↗
25. Kresse G, Furthmuller J (1996) Efficiency of ab initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput Mater Sci 6:15–5010.1016/0927-0256(96)00008-0 ↗
26. Hohenberg P, Kohn W (1964) Inhomogeneous electron gas. Phys Rev B 136:B864–B87110.1103/PhysRev.136.B864 ↗
27. Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865–386810.1103/PhysRevLett.77.3865 ↗
28. Basak A, Das D, Sen D, Chattopadhyay KK (2014) Theoretical insights into the electronic and magnetic behaviors of the metal substituted 1H-MoS2 systems: their potential towards CO adsorption and sensing. Comput Mater Sci 95:399–40710.1016/j.commatsci.2014.07.055 ↗
29. Yue Q, Shao Z-Z, Chang S-L, Li J-B (2013) Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field. Nanoscale Res Lett 8(425):1–7
30. Monkhorst HJ, Pack JD (1976) Special points for Brillouin-zone integrations. Phys Rev B 13:5188–519210.1103/PhysRevB.13.5188 ↗
31. Henkelman G, Arnaldsson A, Jónsson H (2006) A fast and robust algorithm for Bader decomposition of charge density. Comput Mater Sci 36:354–36010.1016/j.commatsci.2005.04.010 ↗
32. Zhao H, Zhang C-W, Ji W-X (2016) Unexpected giant-gap quantum spin hall insulator in chemically decorated plumbene monolayer. Sci Rep 6(20152):1–8
33. Li C, Freeman AJ, Jansen HCF, Fu CL (1990) Magnetic anisotropy in low-dimensional ferromagnetic systems: Fe monolayers on Ag(001), Au(001), and Pd(001) substrates. Phys Rev B 42:5433–544210.1103/PhysRevB.42.5433 ↗
34. Zhang R-W, Zhang C-W, Ji W-X, Li S-S, Yan S-S, Hu S-J, Li P, Wang P-J, Li F (2016) Room temperature quantum spin hall insulator in ethynyl-derivative functionalized stanene films quantum spin hall (QSH) insulators feature. Sci Rep 6:1887910.1038/srep18879 ↗
35. Zhang R-W, Ji W-X, Zhang C-W, Li S-S, Li P, Wang P-J (2016) New family of room temperature quantum spin Hall insulators in two-dimensional germanene films. J Mater Chem C 4:2088–209410.1039/C6TC00160B ↗
36. Zhao S, Xue J, Kang W (2014) Gas adsorption on MoS2 monolayer from first-principles calculations. Chem Phys Lett 595–596:35–4210.1016/j.cplett.2014.01.043 ↗
37. Li H-X, Min H-G, Cao G-Y (2016) Markedly different adsorption behaviors of gas molecules on defective monolayer MoS2: a first-principles study. Phys Chem Chem Phys 18:15110–1511710.1039/C6CP01362G ↗
38. Li S-S, Zhang C-W (2016) Tunable electronic structures and magnetic properties in two-dimensional stanene with hydrogenation. Mater Chem Phys 173:246–25410.1016/j.matchemphys.2016.02.010 ↗
39. Wang Y-P, Ji W-X, Zhang C-W, Li P, Li F, Wang P-J, Li S-S, Yan S-S (2016) Large-gap quantum spin Hall state in functionalized dumbbell stanene. Appl Phys Lett 108:07310410.1063/1.4942380 ↗
40. Nose S (1984) Comment on ‘Extensions of the molecular dynamics simulation method. II. Isothermal systems’. J Chem Phys 81:3749–375010.1063/1.447334 ↗
41. Yu X-F, Li Y-C, Cheng J-B, Liu Z-B, Li Q-Z, Li W-Z, Yang X, Xiao B (2015) Monolayer Ti2CO2: a promising candidate for NH3 sensor or capturer with high sensitivity and selectivity. ACS Appl Mater Interfaces 7(24):13707–1371310.1021/acsami.5b03737 ↗
42. Guo H-Y, Zhang W-H, Lu N, Zhuo Z-W, Zeng X-C, Wu X-J, Yang J-L (2015) CO2 capture on h-BN sheet with high selectivity controlled by external electric field. J Phys Chem C 119:6912–691710.1021/acs.jpcc.5b00681 ↗
43. Chen X-P, Tan C-J, Yang Q, Meng R-S, Liang Q-H, Cai M, Zhang S-L, Jiang J-K (2016) Ab initio study of the adsorption of small molecules on stanene. J Phys Chem C 120(26):13987–1399410.1021/acs.jpcc.6b04481 ↗
44. Tang S, Cao Z (2011) Adsorption of nitrogen oxides on graphene and graphene oxides: insights from density functional calculations. J Chem Phys 134(4):04471010.1063/1.3541249 ↗