Detailed investigation of ultrasonic Al–Cu wire-bonds: II. Microstructural evolution during annealing
Source abstract
Abstract
Scanning and transmission electron microscopy were used to study the interface composition and morphology of copper wire-bonds heat-treated at 175 °C for 2, 24, 96, and 200 h in argon. Detailed morphological and compositional characterization of the Al–Cu heat-treated interfaces was conducted on site-specific specimens prepared by focused ion beam milling. Discontinuous intermetallic grains with varying size and morphology were found to grow in regions where they originally nucleated during the bonding process. The main intermetallic phase was Al2Cu, which was found to grow via solid-state diffusion. In specimens heat-treated for 96 and 200 h, the Al4Cu9 phase was also detected. Void formation at the Al–Cu bonds heat-treated up to 200 h was not found to be a source of bond failure.
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Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · Aluminum Alloys Composites Properties · Advanced Welding Techniques Analysis
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References (21)
Show source-provided references
1. Harman G (1997) Wire bonding in microelectronics materials, processes, reliability and yield. McGraw-Hill, New York
2. Drozdov M, Gur G, Atzmon Z, Kaplan WD (2008) J Mater Sci. doi:https://doi.org/10.1007/s10853-008-2954-x10.1007/s10853-008-2954-x ↗
3. Brydson R, Bruley J, Mullejans H, Scheu C, Ruhle M (1995) Ultramicroscopy 59(1–4):81. doi:https://doi.org/10.1016/0304-3991(95)00020-210.1016/0304-3991(95)00020-2 ↗
4. Sadan H, Kaplan WD (2006) J Mater Sci 41(16):5099. doi:https://doi.org/10.1007/s10853-006-0437-510.1007/s10853-006-0437-5 ↗
5. Toyozawa K, Fujita K, Minamide S, Maeda T (1990) IEEE Trans Compon Hybr Manuf Technol 13(4):667. doi:https://doi.org/10.1109/33.6257710.1109/33.62577 ↗
6. Singh I Sr, On JY, Levine L Sr (2005) Proc Electron Compon Technol 55(1):843
7. Tan CW, Daud AR (2002) J Mater Sci Mater Electron 13(5):309. doi:https://doi.org/10.1023/A:101558022709010.1023/A:1015580227090 ↗
8. Murali S, Srikanth N, Vath CJ (2003) Mater Charact 50(1):39. doi:https://doi.org/10.1016/S1044-5803(03)00102-510.1016/S1044-5803(03)00102-5 ↗
9. Wulff FW, Breach CD, Saraswati SD, Dittmer KJ (2004) Proceedings of electronics packaging technology confernce, Singapore, 8–10 December, p 348
10. Onuki J, Koizumi M, Araki I (1987) IEEE Trans Compon Hybr Manuf Technol 10(4):550. doi:https://doi.org/10.1109/TCHMT.1987.113479910.1109/TCHMT.1987.1134799 ↗
11. Ratchev P, Stoukatch S, Swinnen B (2006) Microelectron Reliab 46(8):1315. doi:https://doi.org/10.1016/j.microrel.2005.11.00210.1016/j.microrel.2005.11.002 ↗
12. Kim H-J, Lee JY, Paik K-W et al (2003) IEEE Trans Compon Packag Tech 26(2):367. doi:https://doi.org/10.1109/TCAPT.2003.81512110.1109/TCAPT.2003.815121 ↗
13. Murali S, Srikanth N, Wong YM, Vath CJ (2007) J Mater Sci 42(2):615. doi:https://doi.org/10.1007/s10853-006-1148-710.1007/s10853-006-1148-7 ↗
14. Karpel A, Gur G, Atzmon Z, Kaplan WD (2007) J Mater Sci 42(7):2334. doi:https://doi.org/10.1007/s10853-007-1592-z10.1007/s10853-007-1592-z ↗
15. Karpel A, Gur G, Atzmon Z, Kaplan WD (2007) J Mater Sci 42(7):2347. doi:https://doi.org/10.1007/s10853-007-1593-y10.1007/s10853-007-1593-y ↗
16. Murali S, Srikanth N, Vath CJ (2006) J Electron Packag 128(3):192. doi:https://doi.org/10.1115/1.222921410.1115/1.2229214 ↗
17. Thangadurai P, Lumelsky Y, Silverstein MS, Kaplan WD (2008) Mater Charact. doi:https://doi.org/10.1016/j.matchar.2008.02.00710.1016/j.matchar.2008.02.007 ↗
18. Murray JL (1985) Int Met Rev 30(5):211
19. Hill A, Wallach ER (1989) Acta Metall 37(9):2425. doi:https://doi.org/10.1016/0001-6160(89)90040-010.1016/0001-6160(89)90040-0 ↗
20. Takahashi Y, Inoue K, Nishiguchi K (1993) Acta Metall Mater 41(11):3077. doi:https://doi.org/10.1016/0956-7151(93)90036-R10.1016/0956-7151(93)90036-R ↗
21. Hamm RA, Vandenberg JM (1984) J Appl Phys 56(2):293. doi:https://doi.org/10.1063/1.33396010.1063/1.333960 ↗