Mechanism and Optimization of a Graphene/Silicon Hybrid Diode Terahertz Modulator
Source abstract
Abstract
Graphene/silicon hybrid diodes have been proven efficient for broad-band terahertz (THz) modulation with electrical and optical stimuli. However, the optimal protocol to apply optical and electrical stimuli has not been well-determined to obtain the best performance. Here, band theory of the hybrid diode has been used to analyze the underlying modulation mechanism and to help determine the optimal modulation protocol. Monolayer gold nanoparticles (AuNPs) were coated on the graphene/silicon hybrid diode to enhance the modulation performance. Both high modulation depth (∼93%) and modulation rate (∼4.6 kHz) were obtained with the AuNP-coated hybrid diode using the proper modulation method. To explore the underlying mechanism for a graphene/silicon hybrid diode THz modulator, this work could throw light on other material systems for THz modulation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Terahertz technology and applications · Plasmonic and Surface Plasmon Research · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, China
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Sichuan Science and Technology Project
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