Optical and electrical properties of aluminum-doped zinc oxide nanoparticles

Aluminum-doped zinc oxide nanopowders were prepared using a surfactant assisted complex sol–gel method, and were characterized using inductively coupled plasma, X-ray diffraction, scanning electron microscopy/energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and UV–Vis spectroscopy. Al was effectively doped into the ZnO matrix with concentrations up to 6.00 atomic ratio percents (at.%). X-ray diffraction results revealed that all of the nanoparticles had a pure hexagonal wurtzite structure free of any impurities when annealing temperature was below 1273 K. The optical band gap of the nanopowders, which was affected by the Al-doping concentration, reached a maximum of 3.43 eV when ZnO was doped with 4.00 at.% Al. The effect of post-annealing temperature and vacuum conditions on the resistivities of the Al-doped ZnO nanoparticles was also investigated. And the lowest volume resistivity (1.2 Ω cm) was achieved by annealing the Al-doped ZnO nanoparticles in a vacuum at 1173 K for 2 h.