Plasma-induced synthesis of boron and nitrogen co-doped reduced graphene oxide for super-capacitors
Source abstract
Abstract
Boron and nitrogen co-doped reduced graphene oxide (BN-rGO) materials were prepared via a facile dielectric barrier discharge plasma treatment method. X-ray photoelectron spectroscopy results demonstrated that the boron content in the boron-doped rGO (B-rGO) and BN-rGO is 1.21 at.% and 1.41 at.%, while the nitrogen content in the nitrogen-doped rGO (N-rGO) and BN-rGO is 2.12 at.% and 2.69 at.%, respectively. The doping of heteroatoms significantly improves the capacitance of the as-synthesized materials, giving BN-rGO a highly enhanced capacitance of 350 F g−1 at a current density of 0.5 A g−1, which is 2.36, 1.46 and 1.21 times higher than that of rGO, B-rGO or N-rGO, respectively.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Supercapacitor Materials and Fabrication · Advancements in Battery Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
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