Electroforming-Free HfO2:CeO2Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
Source abstract
Abstract
Resistive switching and anisotropic optical properties have been investigated in two-phase HfO2:CeO2 nanocomposite thin films of different HfO2:CeO2 ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO3(001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO2 pillars embedded in a HfO2 matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO2 and CeO2 in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO2:CeO2 VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
Department of Materials Design and Innovation, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
Funding
Engineering and Physical Sciences Research Council · Royal Academy of Engineering · Leverhulme Trust · Division of Electrical, Communications and Cyber Systems
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