DataVXACS Applied Electronic MaterialsPaper
journal article·2019-12-24

Electrically Stimulated Synaptic Resistive Switch in Solution-Processed Silicon Nanocrystal Thin Film: Formation Mechanism of Oxygen Vacancy Filament for Synaptic Function

Takeshi Kawauchi, Shinya Kano, Minoru Fujii

ACS Applied Electronic Materials· Volume 1· Issue 12
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Source abstract

Abstract

We demonstrate an electrically stimulated synaptic resistive switch in a silicon nanocrystal (Si NC) thin film. A forming-free resistive switching occurs on the surface of natively oxidized Si NCs because of filaments of oxygen vacancies. To show a gradual change of the resistance, we investigate a formation mechanism of an oxygen vacancy filament. This gradual change in the resistance with input voltage pulses corresponds to short-term plasticity (STP) and long-term potentiation (LTP) in biological synapses. We simulate spike-timing-dependent plasticity (STDP) in the resistive switch by voltage pulses.
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Research context

Nanomaterials

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan

Funding

Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy · International Visegrad Fund · Japan Society for the Promotion of Science · Japan Science and Technology Agency · Nemzeti Kutat?si Fejleszt?si ?s Innov?ci?s Hivatal · Slovensk? Akad?mia Vied · Narodowe Centrum Badan i Rozwoju · Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Hungarian Academy of Sciences

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