DataVXACS Applied Electronic MaterialsPaper
journal article·2019-07-23

Alumina-Coated Cu@Reduced Graphene Oxide Microspheres as Enhanced Antioxidative and Electrically Insulating Fillers for Thermal Interface Materials with High Thermal Conductivity

Huangqing Ye, Haoran Wen, Jiahui Chen, Pengli Zhu, Matthew M. F. Yuen, Xian-Zhu Fu, Rong Sun, Ching-Ping Wong

ACS Applied Electronic Materials· Volume 1· Issue 7
Publisher page
Source abstract

Abstract

Alumina-deposited reduced graphene oxide-coated Cu microspheres (Cu@rGO@Al2O3) are fabricated by heating graphene oxide nanosheet-coated Cu microspheres with the Al(OH)3 outer layer under H2/Ar atmospheres. The Cu@rGO@Al2O3 microspheres exhibit high anticorrosion and antioxidation properties. Compared with bare Cu microsphere filler, the Cu@rGO@Al2O3 microsphere-filled thermal interface materials demonstrate 1.5 times higher thermal conductivity and 4.8 times higher permissible voltage (electrical insulation) due to the high thermal layer of rGO and the electrically insulating coating of Al2O3. This unique core–shell Cu@rGO@Al2O3-based composite with high thermal conductivity, antioxidative stability, and electrical insulation could be promising as efficient thermal interface materials for advanced electronic packaging techniques.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsComposites

OpenAlex topics: Thermal properties of materials · Dielectric materials and actuators · Electromagnetic wave absorption materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen 518055, China

Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong, China

College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funding

Ministry of Science and Technology of the People's Republic of China · Chinese Academy of Sciences · National and Local Joint Engineering Laboratory of Advanced Electronic Packaging Materials · Shenzhen research plan · SIAT CAS-CUHK Joint Laboratory of Materials and Devices for High Density Electronic Packaging · Shenzhen Key Laboratory

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