Study on the Cu Microstructure and Sn Supply Affecting the Interfacial Reaction of Cu/Sn Nanowires for Advanced Electronic Packaging
Source abstract
Abstract
The interfacial reactions between Cu and Sn at the nanoscale, which is critical to the development of microbump (μ-bump) technology, require further understanding. Constructing the nanoscale interface for observing the interfacial behavior during reactions is a challenge. This study investigates the interfacial reactions within Cu/Sn composite nanoarrays fabricated through template electrodeposition to explore the growth process of intermetallic compounds (IMCs). The results reveal that polycrystalline Cu/Sn composite nanoarrays were successfully electroplated with varying Sn fractions, which regulated the growth of IMCs. Additionally, both polycrystalline copper/IMC and nanotwinned copper (nt-Cu)/IMC nanowires were analyzed to explore the effect of the Cu microstructure on IMC growth. Finally, full-IMC nanowires were prepared via high-temperature storage, where twins may act as vacancy sinks at this condition, preventing the formation of voids, which should hold great significance for guiding the preparation of full-IMC μ-bumps in transient liquid-phase (TLP) bonding. This work provides deeper insights into solder joint interface changes in electronic devices during operation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Metal Research, Chinese Academy of Sciences
School of Materials Science and Engineering
University of Science and Technology of China
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences
Nano Science and Technology Institute
China Electronics Technology Group Corporation, No. 58 Research Institute, Wuxi 214000, China
Funding
Basic and Applied Basic Research Foundation of Guangdong Province · National Natural Science Foundation of China
References (52)
Show source-provided references
1. 10.1016/j.mtadv.2020.10010110.1016/j.mtadv.2020.100101 ↗
2. 10.1016/j.scriptamat.2020.01.00510.1016/j.scriptamat.2020.01.005 ↗
3. 10.1016/S0927-796X(02)00007-410.1016/S0927-796X(02)00007-4 ↗
4. 10.1016/j.matlet.2014.10.04110.1016/j.matlet.2014.10.041 ↗
5. 10.1016/j.jmrt.2023.08.11210.1016/j.jmrt.2023.08.112 ↗
6. 10.1016/j.actamat.2021.11716810.1016/j.actamat.2021.117168 ↗
7. 10.1002/admi.20220073210.1002/admi.202200732 ↗
8. 10.1016/j.matchar.2020.11083010.1016/j.matchar.2020.110830 ↗
9. 10.1016/j.matlet.2020.12732710.1016/j.matlet.2020.127327 ↗
10. 10.1016/j.actamat.2016.10.00810.1016/j.actamat.2016.10.008 ↗
11. 10.1038/srep1349110.1038/srep13491 ↗
12. 10.1016/j.actamat.2015.11.03410.1016/j.actamat.2015.11.034 ↗
13. 10.1016/j.jmst.2023.09.05010.1016/j.jmst.2023.09.050 ↗
14. 10.1016/j.actamat.2016.07.02110.1016/j.actamat.2016.07.021 ↗
15. 10.1007/s10854-020-04646-310.1007/s10854-020-04646-3 ↗
16. 10.5104/jiepeng.2.4610.5104/jiepeng.2.46 ↗
17. 10.1016/j.actamat.2019.11.03210.1016/j.actamat.2019.11.032 ↗
18. 10.1007/s11669-023-01041-310.1007/s11669-023-01041-3 ↗
19. 10.1016/j.matchar.2023.11355310.1016/j.matchar.2023.113553 ↗
20. 10.1007/s10854-021-07435-810.1007/s10854-021-07435-8 ↗
21. Shang, P.J.; Liu, Z.Q.; Li, D.; Shang, J.K. Orientation Relationships Among Sn/Cu6Sn5/Cu3Sn/(111)Cu in the Eutectic SnBi/(111)Cu Solder Joint. In 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010.
22. 10.1016/j.matchar.2024.11366810.1016/j.matchar.2024.113668 ↗
23. 10.1016/j.jallcom.2024.17487610.1016/j.jallcom.2024.174876 ↗
24. 10.1016/j.matchar.2024.11405610.1016/j.matchar.2024.114056 ↗
25. 10.1016/j.matdes.2016.01.03710.1016/j.matdes.2016.01.037 ↗
26. 10.1016/j.jmrt.2023.09.18910.1016/j.jmrt.2023.09.189 ↗
27. 10.1016/j.intermet.2022.10761410.1016/j.intermet.2022.107614 ↗
28. 10.1016/j.jmst.2021.03.06510.1016/j.jmst.2021.03.065 ↗
29. 10.1016/j.actamat.2008.01.05510.1016/j.actamat.2008.01.055 ↗
30. 10.1126/science.121651110.1126/science.1216511 ↗
31. 10.1016/j.matchar.2021.11131610.1016/j.matchar.2021.111316 ↗
32. 10.1021/acsami.8b1352810.1021/acsami.8b13528 ↗
33. 10.1038/s41928-019-0300-810.1038/s41928-019-0300-8 ↗
34. 10.1016/j.actamat.2016.11.05110.1016/j.actamat.2016.11.051 ↗
35. 10.1016/j.jmrt.2023.04.22810.1016/j.jmrt.2023.04.228 ↗
36. 10.1016/j.jmrt.2024.07.22010.1016/j.jmrt.2024.07.220 ↗
37. 10.1016/j.jallcom.2019.15282510.1016/j.jallcom.2019.152825 ↗
38. 10.1007/s11664-014-3373-110.1007/s11664-014-3373-1 ↗
39. 10.1016/j.jallcom.2019.01.38410.1016/j.jallcom.2019.01.384 ↗
40. 10.1016/j.scriptamat.2011.04.03410.1016/j.scriptamat.2011.04.034 ↗
41. 10.1002/smll.20150089610.1002/smll.201500896 ↗
42. 10.1016/j.intermet.2022.10755510.1016/j.intermet.2022.107555 ↗
43. 10.1016/j.cej.2024.15430810.1016/j.cej.2024.154308 ↗
44. 10.1016/j.matchar.2020.11027810.1016/j.matchar.2020.110278 ↗
45. 10.1007/s11669-011-9907-910.1007/s11669-011-9907-9 ↗
46. 10.3901/JME.2022.02.22310.3901/JME.2022.02.223 ↗
47. 10.1016/j.commatsci.2022.11134910.1016/j.commatsci.2022.111349 ↗
48. 10.1007/s10853-023-09225-510.1007/s10853-023-09225-5 ↗
49. 10.1016/j.matchar.2021.11127110.1016/j.matchar.2021.111271 ↗
50. 10.1016/j.intermet.2023.10799010.1016/j.intermet.2023.107990 ↗
51. 10.1016/j.scriptamat.2013.10.01310.1016/j.scriptamat.2013.10.013 ↗
52. 10.1016/j.scriptamat.2012.10.02410.1016/j.scriptamat.2012.10.024 ↗