Development of Inks with Fillers of NbS₃ Quasi-One-Dimensional Charge-Density-Wave Material

We report on the solution processing and testing of electronic ink composed of quasi-one-dimensional NbS 3 charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS 3 crystals into high-aspect-ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution. The results of the electrical measurements of two-terminal electronic test structures printed on silicon substrates reveal resistance anomalies in the temperature range of ∼330–370 K. It was found that the changes in the temperature-dependent resistive characteristics of the test structures originate from the charge-density-wave phase transition of individual NbS 3 fillers. The latter confirms that the exfoliated NbS 3 fillers preserve their intrinsic charge-density-wave condensate states and can undergo phase transitions above room temperature even after chemical exfoliation processes and printing. These results are important for developing “quantum inks” with charge-density-wave fillers for the increased functionality of future solution-processed electronics.