Research on Resistive Switching and Synaptic Performance of CeOx/TaOx-Based Memristor
Source abstract
Abstract
Dual-terminal memristors have emerged as pivotal candidates for next-generation nonvolatile memory due to their fast switching and low energy consumption. In this study, we fabricated Ag/CeO x /TaO x /FTO and Ag/TaO x /FTO memristors and systematically investigated their resistive switching behaviors and synaptic functionalities. The incorporation of a CeO x interlayer significantly enhances oxygen vacancy concentration, reduces the SET/RESET voltages (0.55 V/–2 V vs 2 V/–3 V for Ag/TaO x /FTO), and broadens the memory window (resistance ratio >100). Moreover, the CeO x layer stabilizes oxygen vacancy migration, achieving excellent endurance (>1000 cycles) and retention stability (CV < 17% over 10 4 s). Notably, the device emulates synaptic plasticity, including long-term potentiation/depression (LTP/LTD), spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF), with high linearity. These advancements position the Ag/CeO x /TaO x /FTO memristor as a promising platform for energy-efficient neuromorphic computing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology
Hangzhou Dianzi University
Funding
Fundamental Research Funds for the Provincial Universities of Zhejiang · National College Students? innovation and entrepreneurship training program
References (75)
Show source-provided references
1. 10.1038/s41586-020-1942-410.1038/s41586-020-1942-4 ↗
2. 10.1016/j.mejo.2012.10.00110.1016/j.mejo.2012.10.001 ↗
3. 10.1002/aelm.20180051910.1002/aelm.201800519 ↗
4. 10.1016/j.jallcom.2023.17084610.1016/j.jallcom.2023.170846 ↗
5. 10.1016/j.mtelec.2023.10003110.1016/j.mtelec.2023.100031 ↗
6. 10.1016/j.jmmm.2015.02.06810.1016/j.jmmm.2015.02.068 ↗
7. 10.1109/JPROC.2011.216674910.1109/JPROC.2011.2166749 ↗
8. 10.1109/TBCAS.2016.261835110.1109/TBCAS.2016.2618351 ↗
9. 10.1002/cta.242910.1002/cta.2429 ↗
10. 10.1002/adma.20220992510.1002/adma.202209925 ↗
11. 10.1016/j.mtcomm.2022.10395710.1016/j.mtcomm.2022.103957 ↗
12. 10.1016/j.ceramint.2023.03.22310.1016/j.ceramint.2023.03.223 ↗
13. 10.1016/j.ceramint.2024.02.13410.1016/j.ceramint.2024.02.134 ↗
14. 10.1016/j.mtcomm.2022.10418610.1016/j.mtcomm.2022.104186 ↗
15. 10.1016/j.orgel.2022.10645510.1016/j.orgel.2022.106455 ↗
16. 10.1016/j.mssp.2022.10671810.1016/j.mssp.2022.106718 ↗
17. 10.13164/re.2015.038410.13164/re.2015.0384 ↗
18. 10.1016/j.jallcom.2022.16376410.1016/j.jallcom.2022.163764 ↗
19. 10.1038/srep2008510.1038/srep20085 ↗
20. 10.1016/j.jallcom.2023.17092010.1016/j.jallcom.2023.170920 ↗
21. 10.3390/ma1524908710.3390/ma15249087 ↗
22. 10.1021/acsanm.3c0128210.1021/acsanm.3c01282 ↗
23. 10.1016/j.ceramint.2023.02.05210.1016/j.ceramint.2023.02.052 ↗
24. 10.1039/D3CP01729J10.1039/D3CP01729J ↗
25. 10.1103/PhysRevMaterials.5.02460310.1103/PhysRevMaterials.5.024603 ↗
26. 10.1002/advs.20220175310.1002/advs.202201753 ↗
27. 10.1186/s11671-017-1847-910.1186/s11671-017-1847-9 ↗
28. 10.1109/JEDS.2020.296679910.1109/JEDS.2020.2966799 ↗
29. 10.1109/LED.2017.271916110.1109/LED.2017.2719161 ↗
30. 10.1109/TED.2017.270933810.1109/TED.2017.2709338 ↗
31. 10.1021/acs.nanolett.6b0178110.1021/acs.nanolett.6b01781 ↗
32. 10.1063/1.503748610.1063/1.5037486 ↗
33. 10.1186/s11671-023-03800-010.1186/s11671-023-03800-0 ↗
34. 10.2298/NTRP1002120M10.2298/NTRP1002120M ↗
35. 10.1016/j.cplett.2022.13949610.1016/j.cplett.2022.139496 ↗
36. 10.1039/C6RA28868E10.1039/C6RA28868E ↗
37. 10.1016/j.nanoen.2022.10807210.1016/j.nanoen.2022.108072 ↗
38. 10.1016/0038-1101(78)90335-010.1016/0038-1101(78)90335-0 ↗
39. 10.1016/j.nanoen.2023.10839810.1016/j.nanoen.2023.108398 ↗
40. 10.1016/j.mseb.2023.11646210.1016/j.mseb.2023.116462 ↗
41. 10.1016/j.commatsci.2022.11175210.1016/j.commatsci.2022.111752 ↗
42. 10.1002/admi.20220169110.1002/admi.202201691 ↗
43. 10.3390/ma1604168710.3390/ma16041687 ↗
44. 10.1016/j.apsusc.2021.14927410.1016/j.apsusc.2021.149274 ↗
45. 10.1016/j.isci.2023.10646110.1016/j.isci.2023.106461 ↗
46. 10.1016/j.isci.2022.10524010.1016/j.isci.2022.105240 ↗
47. 10.1088/1674-1056/ac3ece10.1088/1674-1056/ac3ece ↗
48. 10.1063/5.002073510.1063/5.0020735 ↗
49. 10.1002/pssa.221123011910.1002/pssa.2211230119 ↗
50. 10.1002/adma.20100430610.1002/adma.201004306 ↗
51. 10.1063/5.000252010.1063/5.0002520 ↗
52. 10.3390/electronics403058610.3390/electronics4030586 ↗
53. 10.1016/j.jallcom.2022.16678310.1016/j.jallcom.2022.166783 ↗
54. 10.7498/aps.69.2020016010.7498/aps.69.20200160 ↗
55. 10.1016/j.mssp.2015.04.03310.1016/j.mssp.2015.04.033 ↗
56. 10.1088/1361-6528/ad364b10.1088/1361-6528/ad364b ↗
57. 10.1063/5.007013210.1063/5.0070132 ↗
58. 10.1109/TED.2020.303602010.1109/TED.2020.3036020 ↗
59. 10.3390/nano1008143710.3390/nano10081437 ↗
60. 10.1063/1.489931910.1063/1.4899319 ↗
61. 10.1063/5.006592210.1063/5.0065922 ↗
62. 10.1016/j.colsurfa.2023.13205310.1016/j.colsurfa.2023.132053 ↗
63. 10.1016/j.neucom.2021.05.06210.1016/j.neucom.2021.05.062 ↗
64. 10.1103/PhysRevApplied.5.05401110.1103/PhysRevApplied.5.054011 ↗
65. 10.1016/j.neucom.2018.11.04310.1016/j.neucom.2018.11.043 ↗
66. 10.1088/1674-1056/28/1/01730410.1088/1674-1056/28/1/017304 ↗
67. 10.1016/j.neucom.2020.10.10610.1016/j.neucom.2020.10.106 ↗
68. 10.1039/C6NR08024C10.1039/C6NR08024C ↗
69. 10.3390/mi1411201410.3390/mi14112014 ↗
70. 10.1016/j.nantod.2024.10218410.1016/j.nantod.2024.102184 ↗
71. 10.3389/fncom.2021.64612510.3389/fncom.2021.646125 ↗
72. 10.1007/s10825-023-02007-x10.1007/s10825-023-02007-x ↗
73. 10.3389/fbioe.2016.0009710.3389/fbioe.2016.00097 ↗
74. 10.1039/C9MH01684H10.1039/C9MH01684H ↗
75. 10.1109/TED.2023.333662810.1109/TED.2023.3336628 ↗