journal article·2024-07-27Open access

Bottom-Up Design of a Supercycle Recipe for Atomic Layer Deposition of Tunable Indium Gallium Zinc Oxide Thin Films

Carlos Morales, Paul Plate, Ludwig Marth, Franziska Naumann, Małgorzata Kot, Christoph Janowitz, Peter Kus, Marvin Hartwig Zoellner, Christian Wenger, Karsten Henkel, Jan Ingo Flege

Abstract

High Resolution Image Download MS PowerPoint Slide We present a successful bottom-up approach to design a generic plasma-enhanced atomic layer deposition (PEALD) supercycle recipe to grow high-quality indium gallium zinc oxide (IGZO) thin films with tunable composition at a relatively low temperature of 150 °C. In situ real-time ellipsometric characterization in combination with ex situ complementary techniques has been used to optimize the deposition process and quality of the films by identifying and solving growth challenges such as degree of oxidation, nucleation delays, or elemental composition. The developed supercycle approach enables facile control of the target composition by adapting the subcycle ratios within the supercycle process. Compared to other low-temperature deposition techniques resulting in amorphous films, our PEALD–IGZO process at 150 °C results in nearly amorphous, nanocrystalline films. The preparation of IGZO films at low temperature by a supercycle PEALD approach allows controlling the thickness, composition, and electrical properties while preventing thermally induced segregation.
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Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus−Senftenberg, K.-Zuse-Str. 1, Cottbus 03046, Germany

SENTECH Instruments GmbH, Schwarzschildstraße 2, Berlin 12489, Germany

Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, Prague 8 18000, Czech Republic

IHP─Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany

Funding

Brandenburgische Technische Universit?t Cottbus-Senftenberg · Brandenburger Staatsministerium f?r Wissenschaft, Forschung und Kultur · Bundesministerium f?r Wirtschaft und Energie

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