Effect of annealing treatment on microstructural evolution and interfacial properties at interfaces in Ir/Nb system
Source abstract
Abstract
This study fabricated Ir/Nb laminated specimens through the sequential deposition of electrodeposited iridium (ED Ir) and chemical vapor deposited niobium (CVD Nb). We systematically investigated the interfacial microstructural evolution, formation of interfacial phases, growth kinetics of the intermetallic compound (IMC) layer, and mutual diffusion behavior at the interface following annealing treatments within the temperature range of 1200∼1600 °C. Furthermore, the underlying mechanisms through which annealing parameters influence interfacial bonding properties were probed. During annealing, four distinct intermetallic compound (IMC) sublayers–Ir 3 Nb,Ir 1.2 Nb 0.8 ,Ir 2 Nb 3 ,IrNb3–formed sequentially at the Ir/Nb interface, exhibiting spatial heterogeneity in thickness distribution. The activation energies for growth followed the order: Ir 3 Nb (2.36 eV) < IrNb 3 (2.53 eV) < Ir 2 Nb 3 (2.88 eV). The study revealed that the evolution of the IMC layer exerts a decisive influence on interfacial bonding strength. Under annealing at 1200 °C for 3 h, the interfacial bonding strength reached a peak value of 341.2 MPa. However, with increasing annealing temperature, the excessively thickened IMC layer exhibited pronounced brittleness, triggering crack nucleation and propagation, which led to a significant degradation in interfacial bonding strength.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Fusion materials and technologies · Semiconductor materials and interfaces · Metallurgical and Alloy Processes
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