Unraveling multi-scale synergistic mechanisms in SiC whiskers-reinforced UHPC: insights from systematic aspect ratio comparisons
Source abstract
Abstract
This study systematically quantifies how the dosage and aspect ratio of silicon carbide whiskers (SiCws) regulate the coupled mechanical–electrical performance of ultra-high performance concrete (UHPC) under standard and microwave curing, and proposes a nano–micro–macro multi-scale synergistic modification mechanism. Under standard curing, SiCws exhibit a previously unreported “early-stage inhibition–late-stage promotion” hydration mode, which is governed by the interfacial interaction between Ca 2+ ions and the amorphous SiO 2 protective film on pyrolysis-derived SiCws. The Ca 2+ capture at early ages retards clinker dissolution, leading to a 5.9% decrease in the 8-h flexural strength of UHPC incorporated with 0.15% SiCw1. In contrast, at the late hydration stage, SiCws serve as effective nucleation sites to facilitate the formation of C-(A)-S-H gels and the densification of the UHPC matrix. Furthermore, microwave curing is demonstrated as an effective activation strategy that disrupts the early Ca 2+ adsorption equilibrium and accelerates whisker-enabled nucleation, thereby significantly improving the early hydration degree of UHPC. Notably, the aspect ratio of SiCws plays a decisive role in the overall modification efficiency. High-aspect-ratio SiCw1 enables “3D interweaving–in situ nucleation” to construct a micro-scale reinforcing skeleton, refine the pore structure, and form a percolated conductive framework. Specifically, at the optimal dosage of 0.15%, UHPC incorporated with SiCw1 achieves a 53.8% increase in ultimate tensile strain, an 80.3% increase in energy dissipation capacity, and a 23.5% reduction in 7-d electrical resistivity. Meanwhile, excessive SiCws induce agglomeration and disrupt the continuity of the reinforcing/conductive skeleton, thus leading to a significant degradation of both mechanical and electrical properties of UHPC.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis · 3D IC and TSV technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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