Source abstract
Abstract
Silicon materials are widely regarded as highly promising candidate anodes for the next generation of lithium-ion batteries. However, the violent volume expansion and low intrinsic conductivity hinder their practical application. In this study, ultrafine N-doped silicon powders (N-doped Si) were prepared by using high-frequency thermal plasma (HF-plasma) technology, in which nanocrystallization and N doping were conducted in a single step without the formation of the Si 3 N 4 phase. Through characterization of X-ray photoelectron spectroscopy, X-ray diffraction, and Raman analysis, it is ascertained that N is doped in silicon after HF-plasma treatment. According to the UV–vis and conductivity tests, N-doped Si has a notably narrower bandgap and a higher conductivity than those of undoped Si. N-doped Si with a submicrosphere (N–Si-0.5) delivered a reversible capacity of 974.1 mA h g –1 at 0.2 A g –1 after 50 cycles and an initial Coulombic efficiency (ICE) of 88.72%. Even at 6 A g –1, N–Si-0.5 can still exhibit a high reversible capacity of 200.5 mA h g –1, while Si without doping (N–Si-0.0) only gives a reversible capacity of 526.8 mA h g –1 at 0.2 A g –1 after 50 cycles with an ICE of 85.81% and an unnoticeable capacity at 6 A g –1 . It is clear that Si shows higher ICE, better cycle stability, and rate performance. For further enhancement of the electrochemical performances of N-doped Si, the Si nanowires (NW-Si) were prepared. Experimental results showed that the initial capacity, ICE, and rate performance all gradually improved as the N 2 flow rate increased. NW-Si-1.0 has an initial capacity of 2725.7 mA h g –1 and an ICE of 80.18%. Even at 6 A g –1, it can provide a reversible capacity of 584.7 mA h g –1 . The enhanced electrochemical performances of N-doped Si can be ascribed to the introduction of the N dopant and nanowire, which raised carrier concentration, accelerated electron transfer, and alleviated volume expansion.
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Affiliations
State Key Laboratory of Mesoscience and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
University of Chinese Academy of Sciences (UCAS), Beijing 100049, PR China
Department of Materials Science and Engineering, School of Science, Beijing Jiaotong University, Beijing 100044, PR China
College of Chemistry and Molecular Sciences, Henan University, Kaifeng 475004, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences (UCAS), Beijing 100049, PR China
Innovation Academy for Green Manufacture, Beijing 100190, PR China
Funding
International Science and Technology Cooperation Programme